Substrate having film pattern and manufacturing method of the same, manufacturing method of semiconductor device, liquid crystal television, and EL television

ABSTRACT

The invention provides a manufacturing method of a substrate having a film pattern including an insulating film, a semiconductor film, a conductive film and the like by simple steps, and also a manufacturing method of a semiconductor device which is low in cost with high throughput and yield. According to the invention, after forming a first protective film which has low wettability on a substrate, a material which has high wettability is applied or discharged on an outer edge of a first mask pattern, thereby a film pattern and a substrate having the film pattern are formed.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a manufacturing method of asemiconductor device having a semiconductor element formed by using adroplet discharging method represented by an ink-jetting method, and toa technique to form a mask pattern, a contact hole, and a film of eachportion of a semiconductor element.

2. Description of the Related Art

It is examined that a droplet discharging apparatus is used for forminga pattern of a thin film and a wiring used for a semiconductor elementin order to realize low cost equipment and simplify the process inmanufacturing a semiconductor device.

A contact hole of a semiconductor element is formed by aphotolithography process in which resist is applied on an entire surfaceof the substrate, prebaked, an ultraviolet ray and the like areirradiated to the substrate through a mask pattern, and a resist patternis formed by development. Then, an insulating film formed on a portionto be a contact hole is removed by etching with the resist pattern as amask pattern, thus the contact hole is formed.

Further, a film pattern of a desired shape is formed by etching asemiconductor film, an insulating film, a metal film and the like byusing a resist pattern.

[Patent Document 1]

Japanese Patent Laid-Open No. 2000-89213

SUMMARY OF THE INVENTION

However, in the conventional process for forming a film pattern, aninsulating film having a contact hole, and the like, bulk of materialsof the film pattern and the resist are wasted and a large number ofsteps are required for forming a mask pattern, which decreasesthroughput.

In the case where the amount of application of resist and a surfacecondition of a base film are not controlled sufficiently when opening acontact hole, the resist spreads over the contact hole and a defectivecontact may occur.

The invention is made in view of the aforementioned problems to providea manufacturing method of a substrate having a film pattern of aninsulating film, a semiconductor film, a conductive film and the likethrough simple steps, and a manufacturing method of a low costsemiconductor device with high throughput and yield.

According to the invention, after a first protective film (hereinafterreferred to as a mask pattern) which has low wettability is formed on asubstrate, a highly wettable material is applied or discharged on anouter edge of the first mask pattern to form a film pattern and asubstrate having the film pattern.

According to the invention, after the first mask pattern which has lowwettability is formed on the substrate, a highly wettable material isapplied or discharged on a region except for the first mask pattern toform a film pattern and a substrate having the film pattern.

According to the invention, after the first mask pattern which has lowwettability is formed on the substrate, a highly wettable material isapplied or discharged in a region on which the first mask pattern is notformed to form a film pattern and a substrate having the film pattern.

According to the invention, after the first mask pattern which has lowwettability is formed on a thin film or a member, a second mask patternwhich has high wettability is formed, the first mask pattern and a thinfilm or a member covered with the first mask pattern are removed, and aninsulating film having a film pattern or a contact hole is formed. Notethat the second mask pattern can be removed later.

The first mask pattern which has low wettability easily repels liquidwhile liquid spreads over the second mask pattern which has highwettability. Liquid solution as a material of for the second maskpattern is repelled in a semispherical shape on a surface of the firstmask pattern, therefore, the second mask pattern can be formed in aself-aligned manner.

The first mask pattern which has low wettability can be formed byirradiating plasma fluoride to an insulating layer. The plasma fluoridecan be generated in fluorine or fluoride atmosphere, or by using anelectrode having a dielectric including fluoroplastic.

For forming the first mask pattern which has low wettability, a materialwhich has low wettability may be discharged or applied on apredetermined position. The material which has low wettability is, forexample, a compound containing a fluorocarbon chain.

It is preferable that a contact angle of the first mask pattern whichhas low wettability be larger than a contact angle of the second maskpattern which has high wettability, and a difference between thesecontact angles be 30°, or preferably 40° or more. As a result, each maskpattern can be formed in a self-aligned manner as the material of thesecond mask pattern is repelled in a semispherical shape on the surfaceof the first mask pattern.

The second mask pattern is preferably used for a mask for forming a filmpattern.

The film pattern is an insulating film, a semiconductor film, aconductive film having desired shapes, or an insulating film having acontact hole. Typically, a gate insulating film, an interlayerinsulating film, a protective film, an insulating film such as aninsulting film having a contact hole, a semiconductor film of a channelforming region, a source region, and a drain region, and a conductivefilm such as a source electrode, a drain electrode, a wiring, a gateelectrode, a pixel electrode, and an antenna are used. After removingthe mask pattern, composition of the mask pattern still exists in theperiphery of the film pattern (a region in which the mask pattern wasformed).

The first mask pattern which has low wettability is formed by using aliquid phase method or a printing method. The liquid phase methodincludes the droplet discharging method, the ink-jetting method and thelike representatively.

The second mask pattern which has high wettability is formed by usingthe liquid phase method. The liquid phase method includes a dropletdischarging method, an ink-jetting method, a spin coating method, a rollcoating method, a slot coating method and the like representatively.

According to the invention, a semiconductor element is formed by using afilm pattern or a member formed by using the first mask pattern whichhas low wettability and the second mask pattern which has highwettability. The semiconductor element is, for example, a TFT, a fieldeffect transistor (FET), a MOS transistor, a bipolar transistor, anorganic semiconductor transistor, an MIM element, a memory element, adiode, a photoelectric converter, a capacitor, a resistor and the like.

According to the invention, a semiconductor device having a film patternformed by using the first mask pattern which has low wettability and thesecond mask pattern which has high wettability, a substrate having thefilm pattern, or a semiconductor element, and a manufacturing methodthereof are provided. The semiconductor device is, for example, anintegrated circuit, a display device, a wireless tag, an IC tag, an ICcard and the like formed of a semiconductor element. The display deviceincludes a liquid crystal display device, a light emitting displaydevice, a DMD (Digital Micromirror Device), a PDP (Plasma DisplayPanel), an FED (Field Emission Display), an electrophoresis displaydevice (electronic paper) and the like representatively. The TFT is, forexample, a staggered TFT, an inverted staggered TFT (a channel-etch typeTFT or a channel protective type TFT), a top gate coplanar TFT, a bottomgate coplanar TFT and the like.

In the invention, a display device means a device using a displayelement, that is an image display device. Further, a module in which aconnector such as a flexible printed circuit (FPC) or a TAB (TapeAutomated Bonding) tape or a TCP (Tape Carrier Package) are attached toa display panel, a module in which an IC (Integrated Circuit) and a CPUare directly mounted on a display element by a COG (Chip On Glass)method are all included in the display device.

The invention provides the aforementioned film pattern, a substratehaving the film pattern, a semiconductor element, or a liquid crystaltelevision or an EL television having a semiconductor device.

According to the invention, after forming a mask pattern by using amaterial for forming a liquid repellent surface on a lyophilic surface,a film pattern and a substrate having the film pattern are formed byusing a lyophilic material on an outer edge of the mask pattern.

According to the invention, after forming a mask pattern by using amaterial for forming a liquid repellent surface on a lyophilic surface,a film pattern and a substrate having the film pattern are formed byusing a lyophilic material in a region except for the mask pattern.

According to the invention, after forming a mask pattern by using amaterial for forming a liquid repellent surface on a lyophilic surface,a film pattern and a substrate having the film pattern are formed byusing a lyophilic material in a region where the mask pattern is notformed.

According to the invention, after forming a first mask pattern by usinga material for forming a liquid repellent surface on a film or a memberhaving a lyophilic surface, a second mask pattern is formed by using alyophilic material, and the first mask pattern and the film or themember having a lyophilic surface covered with the first mask patternare removed to form a film pattern or an insulating film having acontact hole. Note that the second mask pattern can be removed as well.

The film pattern is an insulating film having a desired shape, asemiconductor film, a conductive film, or an insulating film having acontact hole. Typically, a gate insulating film, an interlayerinsulating film, a protective film, an insulating film such as aninsulting film having a contact hole, a semiconductor film of a channelforming region, a source region, a drain region, and the like, and aconductive film such as a source electrode, a drain electrode, a wiring,a gate electrode, a pixel electrode, and an antenna and the like areused. After removing the mask pattern, composition of the mask patternstill exists in the periphery of the film pattern (a region in which themask pattern was formed).

A material for forming a liquid repellent surface is representativelysilane coupling agent expressed by a chemical formula:R_(n)—Si—X_((4-n))(n=1, 2, and 3). Here, R contains a comparativelyinactive group such as an alkyl group. Further, X denotes hydrolysablegroup which can be bound by the condensation with absorptive water orhydroxyl group on a surface of a ground substance such as halogen,methoxy group, ethoxy group, or acetoxy group.

A silane coupling agent containing fluorocarbon group as R (flouroalkylsilane (FAS)) forms a liquid repellent surface which has higher liquidrepellency.

A material having a fluorocarbon chain (representatively fluorocarbonresin) is an example of the material having a liquid repellent surface.

The solvent forming the water repellent surface is hydrocarbon solventsuch as n-pentane, n-hexane, n-heptane, n-octane, n-decane,dicyclopentane, benzene, toluene, xylene, durene, indene,tetrahydronaphthalene, decahydronaphthalene, and squalene, ortetrahydrofuran and the like.

By irradiating plasma, laser or electron beam to the material having aliquid repellent surface, the liquid repellency can be improved.

As the lyophilic material, a substituent (hydroxyl group, hydrogengroup) which can be bonded to the lyophilic surface by hydrolysis or asubstituent (hydroxyl group, hydrogen group, carbonyl group, aminogroup, sulfonyl group, ether group and the like) which is capable ofhydrogen bonding are used. Representatively, organic resin such as acrylresin, polyimide resin, melamine resin, polyester resin, polycarbonateresin, phenol resin, epoxy resin, polyacetal, polyether, polyurethane,polyamide (nylon), furan resin, diallyl phthalate resin, and alsosiloxane and polysilazane can be used. Siloxane is a polymer materialwhich contains a bond of silicon (Si) and oxygen (O) as a backbonestructure and contains at least hydrogen as a substituent or at leastone of fluoride, alkyl group, or aromatic carbon hydride as asubstituent. Polysilazane is a polymer material containing a bond ofsilicon (Si) and nitrogen (Ni), that is a liquid material containingpolysilazane.

A lyophilic surface has a reactive group having polarity on the surface,representatively a substituent (hydroxyl group, hydrogen group) whichcan be bonded to the lyophilic surface by hydrolysis or a substituent(hydroxyl group, hydrogen group, carbonyl group, amino group, sulfonylgroup, ether group and the like) which is capable of hydrogen bonding.

A mask pattern formed of a material for forming a liquid repellentsurface is formed by using the liquid phase method. The liquid phasemethod includes the droplet discharging method, the ink-jetting methodand the like representatively.

A mask pattern or a film pattern formed of lyophilic solution is formedby using the liquid phase method. The liquid phase method is, forexample, the droplet discharging method, the ink-jetting method, thespin coating method, the roll coating method, the slot coating methodand the like representatively.

According to the invention, a semiconductor element is formed by using afilm pattern or a member formed by using the mask pattern formed of amaterial for forming a liquid repellent surface. The semiconductorelement includes a TFT, a field effect transistor (FET), a MOStransistor, a bipolar transistor, an organic semiconductor transistor,an MIM element, a memory element, a diode, a photoelectric converter, acapacitor, a resistor and the like.

The invention provides a film pattern formed by using the mask patternhaving a liquid repellent surface, a substrate having the film pattern,or a semiconductor device having a semiconductor element, and amanufacturing method thereof. The semiconductor device is, for example,an integrated circuit, a display device, a wireless tag, an IC tag andthe like formed of a semiconductor element. The display device is, forexample, a liquid crystal display device, a light emitting displaydevice, a DMD (Digital Micromirror Device), a PDP (Plasma DisplayPanel), an FED (Field Emission Display), an electrophoresis displaydevice (electronic paper) and the like. The TFT is, for example, astaggered TFT, and an inverted staggered TFT (a channel-etch type TFT ora channel protective type TFT).

In the invention, a display device means a device using a displayelement, that is an image display device. Further, a module in which aconnector such as a flexible printed circuit (FPC) or a TAB (TapeAutomated Bonding) tape or a TCP (Tape Carrier Package) is attached to adisplay panel, a module in which an IC (Integrated Circuit) and a CPU(Central Processing Unit) are directly mounted on a display element by aCOG (Chip On Glass) method are all included in the display device.

The invention provides the aforementioned film pattern, a substratehaving the film pattern, a semiconductor element, or a liquid crystaltelevision and an EL television having the semiconductor element.

By using the first mask pattern which has low wettability and the secondmask pattern which has high wettability according to the invention, afilm pattern of a desired shape can be formed on a desired position. Afilm which functions as an interlayer insulating film, a planarizingfilm, a gate insulating film and the like can be formed selectively on adesired position. Moreover, as an insulating film having a film patternand a contact hole can be formed without exposure and developmentprocesses using a resist mask pattern, the process can considerably besimplified as compared to a conventional technique.

By irradiating plasma, laser or electron beam and the like on a maskpattern which has low wettability, the wettability can be furtherdecreased.

By using a mask pattern formed of a material for forming a liquidrepellent surface, a film pattern of a desired shape can be formed at adesired position. A film which functions as an interlayer insulatingfilm, a planarizing film, a gate insulating film and the like can beformed selectively on a desired position. Moreover, as an insulatingfilm having a film pattern and a contact hole can be formed withoutexposure and development processes using a resist mask pattern,therefore, the process can considerably be simplified as compared to aconventional technique. As the mask pattern has a liquid repellentsurface, a film formed of a lyophilic material is not formed, thus themask pattern can easily be removed and a favorable contact hole can beformed through a simplified process.

By irradiating plasma, laser, or electron beam and the like to a maskpattern formed of a material for forming a liquid repellent surface, theliquid repellency can be further improved.

By applying the droplet discharging method before forming a mask patternwhich has low wettability, a mask pattern formed of a material forforming a liquid repellent surface, a conductive film and the like,droplets can be discharged on an arbitrary position by changing arelative positions of a substrate and a nozzle which is an discharginghole of the droplets containing a material of the aforementioned films.As a thickness and a width of a pattern to be formed can be controlledaccording to a relative relationship of a nozzle diameter, an amount ofthe droplets to be discharged, and a moving rate of the nozzle and asubstrate on which the discharged droplets are formed, those films canbe formed at a desired position with high accuracy by discharge. Since apatterning process, namely the exposure and development processes usinga mask pattern can be omitted, the process can considerably besimplified and cost can be reduced. By using the droplet dischargingmethod, a pattern can be formed at an arbitrary position and a thicknessand a width of the pattern can be controlled. Therefore, even a largesemiconductor substrate of which one side is longer than 1 to 2 m can bemanufactured at low cost with high yield.

In this manner, according to the invention, a film pattern, a substratehaving the film pattern, an insulating film having a contact hole, andmoreover a semiconductor element and a semiconductor device having thesecan be formed through a simple process with high precision. Furthermore,the invention can provide a manufacturing method of a semiconductorelement and a semiconductor device at low cost with high throughput andhigh yield.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A to 1C are sectional views showing steps of forming a filmpattern according to the invention.

FIGS. 2A to 2D are sectional views showing steps of forming a filmpattern according to the invention.

FIGS. 3A to 3D are sectional views showing manufacturing steps of asemiconductor device according to the invention.

FIGS. 4A to 4E are sectional views showing manufacturing steps of asemiconductor device according to the invention.

FIGS. 5A to 5E are sectional views showing manufacturing steps of asemiconductor device according to the invention.

FIGS. 6A to 6D are sectional views showing manufacturing steps of asemiconductor device according to the invention.

FIGS. 7A to 7C are sectional views showing steps of forming a filmpattern according to the invention.

FIGS. 8A to 8E are sectional views showing manufacturing steps of asemiconductor device according to the invention.

FIGS. 9A to 9D are sectional views showing manufacturing steps of asemiconductor device according to the invention.

FIGS. 10A to 10C are sectional views showing manufacturing steps of asemiconductor device according to the invention.

FIG. 11 is a top plan view showing a manufacturing step of asemiconductor device according to the invention.

FIG. 12 is a top plan view showing a manufacturing step of asemiconductor device according to the invention.

FIG. 13 is a top plan view showing a manufacturing step of asemiconductor device according to the invention.

FIGS. 14A to 14C are top plan views showing mounting methods of drivercircuits of a semiconductor device according to the invention.

FIGS. 15A to 15D are sectional views showing mounting methods of drivercircuits of a semiconductor device according to the invention.

FIG. 16 is a view showing a structure of a liquid crystal display moduleaccording to the invention.

FIG. 17 is a block diagram showing a structure of an electronicapparatus.

FIG. 18 is a diagram showing an example of an electronic apparatus.

FIGS. 19A and 19B are diagrams showing examples of an electronicapparatus.

FIG. 20 is a diagram showing a structure of a droplet dischargingapparatus which can be applied to the invention.

FIG. 21 is a diagram showing a circuit configuration in the case offorming a scan driver circuit using TFTs in a liquid crystal displaypanel according to the invention.

FIG. 22 is a diagram showing a circuit configuration in the case offorming a scan driver circuit using TFTs in a liquid crystal displaypanel according to the invention (shift register circuit).

FIG. 23 is a diagram showing a circuit configuration in the case offorming a scan driver circuit using TFTs in a liquid crystal displaypanel according to the invention (buffer circuit).

FIGS. 24A to 24C are sectional views showing steps of forming a filmpattern according to the invention.

FIGS. 25A to 25D are sectional views showing manufacturing steps of asemiconductor device according to the invention.

FIGS. 26A to 26D are sectional views showing manufacturing steps of asemiconductor device according to the invention.

FIGS. 27A and 27B are sectional views showing manufacturing steps of asemiconductor device according to the invention.

FIGS. 28A and 28B are views showing a droplet dropping method which canbe applied to the invention.

FIG. 29 is a diagram showing contact angles of a region which has lowwettability and a region which has high wettability.

FIGS. 30A and 30B are views showing a structure of a light emittingdisplay module according to the invention.

FIGS. 31A to 31F are diagrams showing modes of a light emitting elementwhich can be applied to the invention.

FIGS. 32A to 32C are sectional diagrams showing steps of forming a filmpattern according to the invention.

FIGS. 33A to 33C are sectional diagrams showing steps of forming a filmpattern according to the invention.

FIGS. 34A to 34C are sectional diagrams showing steps of forming a filmpattern according to the invention.

DETAILED DESCRIPTION OF THE INVENTION

Although the present invention will be fully described by way of examplewith reference to the accompanying drawings, it is to be understood thatvarious changes and modifications will be apparent to those skilled inthe art. Therefore, unless such changes and modifications depart fromthe scope of the present invention hereinafter defined, they should beconstrued as being included therein. Note that identical portions inembodiment modes are denoted by the same reference numerals and detaileddescriptions thereof are omitted.

Embodiment Mode 1

In this embodiment mode, a step for forming a film pattern having adesired shape by using a mask pattern which has low wettability isdescribed with reference to FIG. 1. Note that the mask pattern describedin this embodiment mode is a mask pattern used for forming a filmpattern.

As shown in FIG. 1A, a first film 102 is formed on a substrate 101. Afirst mask pattern 103 which has low wettability is formed thereon bythe droplet discharging method, the ink-jetting method and the like.Here, the droplet discharging method is used as a method for forming themask pattern.

As the substrate 101, a glass substrate, a quartz substrate, a substrateformed of an insulating substance such as alumina, a plastic substratewhich can resist a processing heat of a subsequent step, a siliconwafer, a metal substrate and the like can be used. In this case, it ispreferable to form an insulating film for preventing impurities and thelike from dispersing from a substrate side, such as silicon oxide(SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy) (x>y), andsilicon nitride oxide (SiNxOy) (x>y) films. Metal plate such asstainless or a semiconductor substrate over which an insulating filmsuch as silicon oxide and silicon nitride are formed can be used aswell. Also, a substrate of which size is 320×400 mm, 370×470 mm, 550×650mm, 600×720 mm, 680×880 mm, 1000×1200 mm, 1100×1250 mm, or 1150×1300 mmcan be used as the substrate 101. Here, a glass substrate is used as thesubstrate 101.

In the case of using a plastic substrate as the substrate 101, it ispreferable to use PC (polycarbonate), PES (polyethylene sulfone), PET(polyethylene terephthalate), PEN (polyethylene naphthalate) or the likewhich has relatively high glass transition temperatures.

As the first film 102, any of an insulating layer, a conductive layer,and a semiconductor layer which are formed by a sputtering method, avapor deposition method, a CVD method, an application method and thelike can be used. A known inorganic insulating material or an organicinsulating material is appropriately used for the first film 102 formedof an insulating layer. Representatively, SiO₂ and the like having aSi-CH₃ bond which is typically polyimide, polyamide, polyester, acryl, aPSG (Phosphor Silicate Glass), a BPSG (Boron Phosphorous Silicon Glass),a film, silicate SOG (Spin On Glass), alkoxysilicate SOG, polysilazaneSOG, and siloxane polymer can be formed by the droplet dischargingmethod, the application method, or the printing method. Also, siliconnitride, silicon nitride oxide, silicon oxide and the like can be formedby a PVD (Physical Vapor Deposition) method, a CVD (Chemical VaporDeposition) method, and a thermal oxidizing method. Moreover, a metaloxide such as Ag, Cu, Ni, Pt, Pd, Ir, Rh, W, Al, Ta, Mo, Cd, Zn, Fe, Ti,Si, Ge, Zr, and Ba can be formed by a vapor deposition method, an anodeoxidizing method and the like. Here, a silicon oxide film is formed bythe sputtering method.

As a material for the first film 102 formed of a conductive layer,metal, alloy, or metal nitride of Ag, Au, Cu, Ni, Pt, Pd, Ir, Rh, W, Al,Ta, Mo, Cd, Zn, Fe, Ti, Si, Ge, Zr, Ba and the like can be used.Further, indium tin oxide (ITO), zinc oxide (ZnO), indium zinc oxide(IZO), gallium-doped zinc oxide (GZO), indium tin oxide containingsilicon oxide, organic indium, organotin and the like used for alight-transmitting conductive film can be appropriately used. Further,aluminum containing 1 to 20% of nickel can be used. Here, aluminum isused for forming the first conductive layer.

As a material for the first film 102 formed of a semiconductor layer, afilm having any one of an amorphous semiconductor using silicon, silicongermanium (SiGe) and the like, a semi-amorphous semiconductor which hasboth an amorphous state and a crystalline state, a micro-crystallinesemiconductor in which crystal grains of 0.5 to 20 nm can be observed inan amorphous semiconductor, and a crystalline semiconductor can beformed. Further, an organic semiconductor material such aspolythienylene vinylene, poly(2,5-thienylene vinylene), polyacetylene,polyacetylene derivative, and polyarylene vinylene can be used as well.

Here, a silicon oxide film is formed by a CVD method as the first film.

The first mask pattern functions as a mask for forming a film patternwhich is formed later. Therefore, it is preferable that the first maskpattern has low wettability.

The first mask pattern 103 is formed by forming an insulating layerwhich has high wettability at a predetermined position and irradiatingfluorine plasma on the surface. Also, plasma treatment can be performedby providing an electrode having a dielectric and generating plasma sothat the dielectric is exposed to the plasma using air, oxygen ornitrogen. In this case, the dielectric is not required to cover thewhole surface of the electrode. As the dielectric, fluorine resin can beused. By using the fluorine resin, a CF₂ bond is formed on the surfaceof the insulating layer, thereby the surface property is modulated andthe wettability is lowered.

As a material for the insulating film, a material obtained by mixingwater-soluble resin such as polyvinyl alcohol (PVA) in the solution ofH₂O and the like can be used. Moreover, PVA and other water-solubleresin can be mixed as well. Further, organic resin such as acryl resin,polyimide resin, melamine resin, polyester resin, polycarbonate resin,phenol resin, epoxy resin, polyacetal, polyether, polyurethane,polyamide (nylon), furan resin, diallyl phthalate resin, and a resistand the like can be used.

The insulating layer can be formed by the droplet discharging method,the screen (stencil) printing method, an offset (planograph) printingmethod, a relief printing method or a gravure (intaglio) printing methodand the like. Thereby the insulating layer can be formed at apredetermined position.

The first mask pattern 103 can be formed by applying or discharging amaterial which has low wettability. The material which has lowwettability is typically a compound having a fluorocarbon chain. Thecompound having a fluorocarbon chain is, for example, silane couplingagent expressed by a chemical formula Rn—Si—X_((4-n))(n=1, 2, and 3).Here, R contains a relatively inactive group such as an alkyl group.Further, X denotes hydrolysable group which can be bonded by thecondensation with absorptive water or hydroxyl group on a surface of aground substance such as halogen, methoxy group, ethoxy group, oracetoxy group.

By using fluorine silane coupling agent (fluoroalkyl silane (FAS))having a fluoroalkyl group for R as a representative example of thesilane coupling agent, the wettability can be lowered. R of FAS has astructure that can be expressed as (CF₃) (CF₂)_(x)(CH₂)_(y)(x: aninteger from 0 to 10, y: an integer from 0 to 4). In the case where aplurality of R or X are bonded to Si, R or X may all be the same ordifferent. Representatively, FAS is fluoroalkylsilane (hereinafterreferred to as FAS) such as heptadecafluoro tetrahydrodecyltriethoxysilane, heptadecafluoro tetrahydrodecyl trichlorosilane,tridecafluoro tetrahydrooctcyl trichlorosilane, and triflouropropyltrimethoxysilane.

As solvent which has low wettability, hydrocarbon solvent such asn-pentane, n-hexane, n-heptane, n-octane, n-decane, dicyclopentane,benzene, toluene, xylene, durene, indene, tetrahydronaphthalene,decahydronaphthalene, and squalene, or tetrahydrofuran and the like areused.

As an example of a compound which has low wettability, a material(fluorine resin) having a fluorocarbon chain can be used. As fluorineresin, polytetrafluoroethylene (PTFE; polytetrafluoroethylene resin),perfluoroalkoxyalkane (PFA; tetrafluoroethylene perfluoroalkylvinylethercopolymerization resin), perfluoroethylene propylene copolymer (PFEPtetrafluoroethylene hexafluoropropylene copolymer resin),ethylene-tetrafluoroethylene copolymer (ETFE;tetrafluoroethylene-ethylene copolymer resin), polyvinylidene fluoride(PVDF; polyvinylidene fluoride resin), polychlorotrifluoroethylene(PCTFE; polytrifluorochloroethylene resin),ethylene-chlorotrifluoroethylene copolymer (ECTFE;polytrifluorochloroethylene-ethylene copolymer resin),polytetrafluoroethylene-perfluorodioxol copolymer (TFE/PDD),polyvinylfluoride (PVF vinyl fluoride resin) and the like can be used.

Next, a surface attached with a material which has low wettability iscleaned with ethanol, thereby a first mask pattern which is quite thinand has low wettability can be formed.

In the case of forming a film pattern having a fine shape, it ispreferable that the first mask pattern 103 formed on the first film 102has a closed curve shape as shown in FIG. 7A. In this case, as shown inFIG. 7B, a material 111 which has high wettability is discharged insidethe mask pattern having a closed curve shape, and then drying or bakingtreatment is performed. Accordingly, a film pattern 121 which has highwettability can be formed in an arbitrary shape as shown in FIG. 7C. InFIG. 7C, the mask pattern is removed and a compound 122 of the maskpattern exists on the surface of the thin film.

A diameter of a nozzle used for the droplet discharging method is set0.1 to 50 μm (preferably 0.6 to 26 μm) and the amount of the compounddischarged from the nozzle is set 0.00001 to 50 pl (preferably 0.0001 to10 pl). This amount increases in proportion to the diameter of thenozzle. Moreover, it is preferable that the object being processed andan discharging orifice of the nozzle be as close as possible fordropping a droplet at a desired position, which is preferably set about0.1 to 2 mm.

Note that viscosity of the compound used for the droplet dischargingmethod is preferably 300 mPa.s or less, or more preferably 50 mPa.s orless for preventing drying and for smoothly discharging the compoundfrom the discharging orifice. Note that the viscosity, surface tensionand the like of the compound may be appropriately controlled accordingto solvent used and application.

As shown in FIG. 1B, the material 111 which has high wettability ascompared to the first mask pattern is applied inside the first maskpattern 103 on the first film 102.

Here, a relation between the region which has low wettability and theregion which has high wettability is described with reference to FIG.29. The region which has low wettability (the first mask pattern 103 inFIG. 29) is a region where a contact angle θ1 of liquid with respect tothe surface of the first film 102 is large as shown in FIG. 29. On thissurface, liquid is repelled in a semi-sphere shape. On the other hand,the region which has high wettability (a region formed of the material111 which has high wettability in FIG. 1B) is a region where a contactangle θ2 of liquid with respect to the surface of the first film 102 issmall. On this surface, liquid is likely to spread.

Therefore, in the case where the two regions having different contactangles are in contact with each other, a region having a relativelysmaller contact angle becomes a region which has high wettability whilea region having a larger contact angle becomes a region which has lowwettability. In the case of applying or discharging solvent on these tworegions, the solvent spreads on the surface of the region which has highwettability while it is repelled in a semi-sphere shape on the boundarybetween the region which has low wettability and the region which hashigh wettability.

It is preferable that a difference between the contact angle θ1 of theregion which has low wettability and the contact angle θ2 of the regionwhich has high wettability be 30°, or more preferably 40° or more. As aresult, a material of the region which has high wettability is repelledin a semi-sphere shape on the surface of the region which has lowwettability, thereby each mask pattern can be formed in a self-alignedmanner. Accordingly, among the substances described as the materials andthe methods for forming the first mask pattern 103, in the case where adifference between the contact angles is 30°, or more preferably 40° ormore, the region formed of a material having a smaller contact anglebecomes a region which has high wettability while the region having alarger contact angle becomes a region which has low wettability.Similarly, among substances which are to be described later as thematerial 111 which has high wettability, in the case where a differencebetween the contact angles is 30° or more preferably 40° or more, theregion formed of a material having a smaller contact angle becomes aregion which has high wettability while the region formed of a materialhaving a larger contact angle becomes a region which has lowwettability.

In the case where the surface has projections and depressions, a contactangle becomes smaller in the region which has low wettability. That is,the wettability is lowered. In the region which has high wettability, onthe other hand, the contact angle becomes smaller. That is, thewettability is heightened. Accordingly, by applying or discharging thematerial which has low wettability and the material which has highwettability on each surface having projections and depressions andperforming baking treatment, a layer of which end portion is uniform canbe formed.

As the material 111 which has high wettability, an insulating material,a conductive material, and a semiconductor material each of which hashigh wettability as compared to the first mask patter can appropriatelybe used. The insulating material is, representatively, organic resinsuch as acryl resin, polyimide resin, melamine resin, polyester resin,polycarbonate resin, phenol resin, epoxy resin, polyacetal, polyether,polyurethane, polyamide (nylon), furan resin, and diallyl phthalateresin, and also siloxane polymer, polysilazane, PSG (Phosphor SilicateGlass), and BPSG (Boron Phosphorous Silicon Glass) can be used.

Also, water, alcohol solution, ether solution, solution using polarsolvent such as dimethylformamide, dimethylacetoamide,dimethylsulfoxide, N-methylpyrrolidone, hexamethylphosphamidon,chloroform, methylene chloride can be used as well.

Furthermore, a conductor dissolved or dispersed in solvent can be usedas a representative of the conductive material. As the conductor, metalsuch as Ag, Au, Cu, Ni, Pt, Pd, Ir, Rh, W, Al, Ta, Mo, Cd, Zn, Fe, Ti,Si, Ge, Zr, and Ba, fine particles of silver halide, or dispersiblenanoparticles can be used. Alternatively, ITO, ITO containing siliconoxide, organic indium, organotin, zinc oxide (ZnO), titanium nitride(TiN) used for a light-transmitting film, and the like can be used.

Furthermore, a plurality of the aforementioned conductors that aredissolved or dispersed can be used as well.

As a representative of the semiconductor material, an organicsemiconductor material can be used. It is preferable that p-electronconjugated high molecular weight material having a conjugated doublebond as its backbone be used as the organic semiconductor material.Representatively, a fusible high molecular weight material such aspolythiophene, poly (3-alkylthiophene), polythiophene derivative, andpentacene can be used.

A material which has higher wettability as compared to the first maskpattern can be applied by the droplet discharging method, theink-jetting method, the spin coating method, the roll coating method,the slot coating method and the like.

Next, a film pattern 121 is formed by drying and baking the materialwhich has higher wettability as compared to the first mask pattern asshown in FIG 1C. Accordingly, in the case where the insulating materialhas high wettability, the film pattern is formed as an insulating layerhaving a desired shape. Further, in the case where the conductivematerial has high wettability, the film pattern is formed as aconductive layer having a desired shape. In the case where thesemiconductor material has high wettability, the film pattern is formedas a semiconductor layer having a desired shape. Note that the solventof the first mask pattern is evaporated in this step and the compound isleft on the surface of the first film 102 or penetrates in the film.Note that the compound left on the surface of the first film 102 can beremoved by a known etching method such as ashing using oxygen, wetetching, and dry etching. In FIG 1C, 122 denotes a compound of a maskpattern which penetrated in the first film 102. In this step, drying andbaking may be performed appropriately according to the material whichhas high wettability.

A material which has high wettability may be applied after drying thesolvent of the first mask pattern instead of the aforementioned step.That is, after forming the first mask pattern 103 by using a materialwhich has low wettability on the first film 102, the first mask patternis dried as shown in FIG. 24B. At this time, the compound of the firstmask pattern is left on the surface of the first mask or penetrates inthe film. In FIG. 24B, 122 denotes a region in which the compound of thefirst mask pattern is penetrated. Next, a material which has highwettability as compared to the first mask pattern is discharged as shownin FIG. 24C. In this case, the compound 122 of the first mask pattern isleft in a region on which the first mask pattern was formed, therefore,a material which has higher wettability as compared to the first maskpattern is repelled and selectively applied as shown in FIG. 24C. Afterthis, the material which has higher wettability as compared to the firstmask pattern is dried or baked appropriately to form the film pattern121.

By the aforementioned step, a film pattern having a desired shape can beformed without using a known photolithography process. Accordingly, thenumber of manufacturing steps can considerably be reduced.

Embodiment Mode 2

In this embodiment mode, steps for forming a film pattern having adesired shape by using a mask pattern formed of a material for forming aliquid repellent surface are described with reference to FIGS. 32A to32C. Note that the mask pattern described in this embodiment is a maskpattern used for forming a film pattern.

As shown in FIG. 32A, a first film 1002 is formed on a substrate 1001. Aprotective film (first mask pattern) 1003 is formed thereon by thedroplet discharging method, the ink-jetting method and the like. Here,the droplet discharging method is used for forming the mask pattern. Itis preferable that the first film 1002 have a lyophilic surface. In thecase where the substrate 1001 has a lyophilic surface, the first film isnot required to be formed.

The substrate 1001 may be a glass substrate, a quartz substrate, asubstrate formed of an insulating substance such as alumina, a plasticsubstrate which can resist the processing heat in a subsequent step, asilicon wafer, a metal plate and the like. In this case, it ispreferable to form an insulating film for preventing impurities and thelike from dispersing from the substrate side, such as silicon oxide(SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy) (x>y) andsilicon nitride oxide (SiNxOy) (x>y). Further, a metal substrate such asstainless or a semiconductor substrate of which surface is formed withan insulating film such as silicon oxide or silicon nitride can be usedas well.

It is preferable that the first film 102 has a lyophilic surface.Although the film is shown here, a member having a lyophilic surface maybe used as well.

The first mask pattern 1003 is formed by using solution for forming alyophilic surface. The compound of the solution for forming a lyophilicsurface is representatively silane coupling agent expressed by achemical formula: R_(n)—Si—X_((4-n))(n=1, 2, and 3). Here, R contains acomparatively inactive group such as an alkyl group. Further, X denoteshydrolysable group which can be bound by the condensation withabsorptive water or hydroxyl group on a surface of a ground substancesuch as halogen, methoxy group, ethoxy group, or acetoxy group.

By using fluorine silane coupling agent (fluoroalkyl silane (FAS))having a fluoroalkyl group for R as a representative example of thesilane coupling agent, the liquid repellency can be heightened. R of FAShas a structure that can be expressed as (CF₃) (CF₂)_(x)(CH₂)_(y)(x: aninteger from 0 to 10, y: an integer from 0 to 4). In the case where aplurality of R or X are bonded to Si, R or X may all be the same ordifferent. Representatively, FAS is fluoroalkylsilane (hereinafterreferred to as FAS) such as heptadecafluoro tetrahydrodecyltriethoxysilane, heptadecafluoro tetrahydrodecyl trichlorosilane,tridecafluoro tetrahydro octcyltrichlorosilane, and triflouropropyltrimethoxysilane.

As solvent of solution for forming a liquid repellent surface,hydrocarbon solvent such as n-pentane, n-hexane, n-heptane, n-octane,n-decane, dicyclopentane, benzene, toluene, xylene, durene, indene,tetrahydronaphthalene, decahydronaphthalene, and squalene, ortetrahydrofuran and the like are used.

As an example of a compound for forming a liquid repellent surface, amaterial (fluorine resin) having a fluorocarbon chain can be used. Asfluorine resin, polytetrafluoroethylene (PTFE; polytetrafluoroethyleneresin), perfluoroalkoxyalkane (PFA; tetrafluoroethyleneperfluoroalkylvinylether copolymerization resin), perfluoroethylenepropylene copolymer (PFEP; tetrafluoroethylene hexafluoropropylenecopolymer resin), ethylene-tetrafluoroethylene copolymer (ETFE;tetrafluoroethylene-ethylene copolymer resin), polyvinylidene fluoride(PVDF; polyvinylidene fluoride resin), polychlorotrifluoroethylene(PCTFE; polytrifluorochloroethylene resin),ethylene-chlorotrifluoroethylene copolymer (ECTFE;polytrifluorochloroethylene-ethylene copolymer resin),polytetrafluoroethylene-perfluorodioxol copolymer (TFE/PDD),polyvinylfluoride (PVF vinyl fluoride resin) and the like can be used.

An organic material which does not form a liquid repellent surface (thatis, which forms a lyophilic surface) may also be used, in this case, theorganic material should be treated with CF₄ plasma or the like to obtainliquid repellency. For example, a material obtained by mixing watersoluble resin such as polyvinyl alcohol (PVA) into solvent of H₂O or thelike may be used before the plasma treatment. Further, PVA and otherwater soluble resin may be used in combination. Note that even in thecase where the mask pattern has a liquid repellent surface, therepellency can be further heightened by performing the plasma treatmentor the like.

In the case of forming a film having a fine shape, it is preferable thatthe first mask pattern 1003 has a closed curve shape which is formed onthe first film 1002 having a lyophilic surface. In this case, secondsolution 1011 is discharged inside the mask pattern having a closedcurve shape as shown in FIG. 33B and then drying or baking treatment isperformed. Consequently, a film pattern 1021 having an arbitrary shapecan be formed as shown in FIG. 33C. In FIG. 33C, the mask pattern isremoved and the compound 1022 of the mask pattern is left on thelyophilic surface.

A diameter of a nozzle used for the droplet discharging method is set0.1 to 50 μm (preferably 0.6 to 26 μm) and an amount of the compounddischarged from the nozzle is set 0.00001 to 50 pl (preferably 0.00001to 10 pl). This amount increases in proportion to the diameter of thenozzle. Moreover, it is preferable that the object being processed andan discharging orifice of the nozzle be as close as possible fordropping a droplet at a desired position, which is preferably set about0.1 to 2 mm.

Note that viscosity of the compound used for the droplet dischargingmethod is preferably 300 mPa.s or less, or more preferably 50 mPa.s orless for preventing drying and for smoothly discharging the compoundfrom the discharging orifice. Note that the viscosity, surface tensionand the like of the compound may be appropriately controlled accordingto solvent used and application.

As shown in FIG. 32B, the second solution 1011 is applied inside thefirst mask pattern 1003. As the second solution, lyophilic solvent canbe used. The lyophilic solution are representatively organic resin suchas acryl resin, polyimide resin, melamine resin, polyester resin,polycarbonate resin, phenol resin, epoxy resin, polyacetal, polyether,polyurethane, polyamide (nylon), furan resin, and diallyl phthalateresin, and also siloxane and polysilazane. Also, water, alcohol group,ether group, solvent using polar solvent such as dimethylformamide,dimethylacetoamide, dimethylsulfoxide, N-methylpyrrolidone,hexamethylphosphamidon, chloroform, methylene chloride can be used aswell. The second solution can be applied by the droplet dischargingmethod, the ink-jetting method, the spin coating method, the rollcoating method, the slot coating method and the like.

Next, as shown in FIG. 32C, the film pattern 1021 is formed by dryingand baking the second solution 1011. In this process, the solvent of themask pattern is evaporated and the compound is left on the surface ofthe first film 1002 or penetrates in the film. Note that the compoundleft on the surface of the first film 1002 can be removed by a knownetching method such as O₂ ashing, wet etching, and dry etching. In FIG.32C, 1022 denotes a compound of a mask pattern which penetrated in thefirst film 1002. In this step, drying and baking may be performedappropriately according to the material of the second solution.

The second solution may be applied after drying the solvent of the firstmask pattern instead of the aforementioned process. That is, afterforming the first mask pattern 1003 by using solution for forming aliquid repellent surface on the first film 1002 as shown in FIG. 34A,the first mask pattern is dried as shown in FIG. 34B. At this time, thecompound of the first mask pattern is left on the surface of the firstfilm 1002 or penetrates in the film. In FIG. 34B, 1022 denotes a regionin which the compound of the first mask pattern is penetrated in thefirst film. Next, the second solution which is lyophilic is applied asshown in FIG. 34C. In this case, the compound 1022 of the first maskpattern is left in a region on which the first mask pattern was formed,therefore, the second solution is repelled and selectively applied asshown in FIG. 34C. After this, the second solution is dried and bakedappropriately to form the second film pattern 1021.

By the aforementioned steps, a film pattern having a desired shape canbe formed without using a known photolithography process. Accordingly,the number of manufacturing steps can considerably be reduced.

Embodiment Mode 3

The following embodiment modes and embodiments are described withreference to Embodiment Mode 1. However, Embodiment Mode 2 can beapplied appropriately.

In this embodiment mode, steps of forming a film pattern having adesired shape using a first mask pattern which has low wettability and asecond mask pattern which has high wettability is described withreference to FIGS. 2A to 2C. Note that the first mask pattern describedin this embodiment mode is a mask pattern used for forming the secondmask pattern. The second mask pattern is a mask pattern used foretching.

As shown in FIG. 2A, a first film 201 is formed on a first substrate 101and a second film 202 is formed on the first film 201. An appropriatematerial is used for the first film. As the second film, a similarmaterial to that of the first film 102 in Embodiment Mode 1 can be used.

Next, a first mask pattern 103 which has low wettability is formed onthe second film 202 by applying a material which has low wettability bythe droplet discharging method. At this time, a material which has highwettability is dried and baked in combination with the material whichhas low wettability.

Next, a material which has high wettability is applied to form a secondmask pattern 212 which has high wettability as shown in FIG. 2B. Thematerial which has high wettability has higher wettability than thematerial which has low wettability, therefore, it is repelled by aportion which is in contact with the first mask pattern 103. As shown inFIG. 2B, the material which has high wettability is applied in a regionon which the first mask pattern is not formed. The material which hashigh wettability can be applied by the droplet discharging method, theink-jetting method, the spin coating method, the roll coating method,the slot coating method and the like. After this a material which hashigh wettability is dried and baked as required. Consequently, thesecond mask pattern 212 as a mask pattern for etching can be formed.

Next, as shown in FIG. 2C, the first mask pattern 103 is removed. Inthis embodiment mode, the first mask pattern 103 is removed by ashing.After this, an exposed region of the second film is etched by a knownmethod such as dry etching and wet etching, thereby the film pattern 221having a desired shape can be formed. In the case where the first maskpattern has a columnar or cylindrical shape, the film pattern is to havea contact hole.

As shown in FIG. 2D, the film pattern 221 having a desired shape can beexposed by removing the second mask pattern 212.

By the aforementioned process, a film pattern having a desired shape canbe formed without using a known photolithography process. Accordingly,the number of manufacturing steps can considerably be reduced. Further,a film pattern or a favorable contact hole can be formed with the lessnumber of steps than the conventional one.

Embodiment Mode 4

Hereinafter described is a manufacturing method of a semiconductorelement. Note that a TFT is taken as an example of a semiconductorelement in this embodiment mode, however, the invention is not limitedto this. An organic semiconductor transistor, a diode, an MIM element, amemory element, a photoelectric converter, a capacitor, a resistor andthe like can be used.

In this embodiment mode, steps of forming a channel-etch type TFT as arepresentative of an inverted staggered TFT as a semiconductor elementusing the invention are described with reference to FIGS. 3A to 3D.

As shown in FIG. 3A, a gate electrode 301 is formed on a substrate 101.The gate electrode 301 is formed by the droplet discharging method, theprinting method, an electric field plating method, a PVD method, and aCVD method. In the case of forming a conductive layer by using the PVDmethod and the CVD method, a mask pattern is formed on a conductivelayer by the method in Embodiment Mode 3 or the photolithographyprocess, thereby the gate electrode is formed by etching into a desiredshape. In this embodiment mode, a compound containing a conductivematerial is selectively discharged on the substrate 101. In this case,as the etching step using the mask pattern is not required, themanufacturing steps can considerably be simplified.

In the case of forming the gate electrode by the droplet dischargingmethod, the compound discharged from an discharging orifice may be aconductor selected from the materials which have low wettabilitydescribed in Embodiment Mode 1 dissolved or dispersed in solvent.Further, the gate electrode 301 can be formed by laminating conductivelayers.

It is preferable that the compound discharged from the dischargingorifice be any one of gold, silver or copper dissolved or dispersed insolvent be used in consideration of the resistivity. More preferably,silver or copper which is low in resistance and cost is used. In thecase of using copper, however, a barrier film is preferably provided incombination for preventing impurities. The solvent may be organicsolvent such as esters such as butyl acetate, and ethyl acetate,alcohols such as isopropyl alcohol, and ethyl alcohol, organic solventsuch as methyl ethyl ketone, and acetone, and the like.

As a barrier film in the case of using copper as a wiring, an insulatingor conductive substance containing nitrogen such as silicon nitride,silicon oxynitride, aluminum nitride, titanium nitride, and tantalumnitride (TaN) are preferably used. The aforementioned substances may beformed by the droplet discharging method as well.

Note that viscosity of the compound used for the droplet dischargingmethod is preferably 5 to 20 mPa.s for preventing drying and forsmoothly discharging the compound from the discharging orifice. It ispreferable that the surface tension be 40 mN/m or less. Note that theviscosity, and the like of the compound may be appropriately controlledaccording to solvent used and application. As an example, the viscosityof the compound obtained by dissolving or dispersing indium tin oxide(ITO), zinc oxide (ZnO), indium zinc oxide (IZO), gallium-doped zincoxide (GZO), and indium tin oxide containing silicon oxide, or organotinin solvent is 5 to 20 mPa.s, the viscosity of the compound obtained bydissolving or dispersing silver in solvent is 5 to 20 mPa.s, and theviscosity of the compound obtained by dissolving or dispersing gold insolvent is 10 to 20 mPa.s.

It is preferable that the diameter of particles of conductors be assmall as possible for preventing clogging of the nozzle and for forminga fine pattern, although it is dependent on the diameter of each nozzleand a desired pattern shape. Preferably, diameter of the particle is 0.1μm or less. The compound is formed by a known method such as anelectrolyzing method, an atomizing method, and a wet reducing method.The particle size is generally about 0.5 to 10 μm. However, when theconductor is formed by gas evaporation method, a nano-molecule protectedby a dispersion agent is about 7 nm, which is minute. When the surfacesof the nano-particles are covered by a coating agent, the nano-particlesare not coagulated in the solvent. The nano-particles are dispersedstably at a room temperature. That is, the nano-particles exhibitsubstantially the same behavior as that of liquid. Therefore, it ispreferable to use a coating agent.

The step of discharging a compound may be performed under a lowpressure. This is because subsequent steps of drying and baking can beomitted or shortened as solvent of the discharged compound isvolatilized until it lands on the object being processed. Afterdischarging a composition, one or both steps of drying and baking iscarried out with laser irradiation, rapid thermal annealing, heatingfurnace, or the like under atmospheric pressure or low pressure. Thesteps of drying and baking are both heat treatment although theirpurposes, temperatures, and time differ. Drying is carried out, forexample, at 100° C. for 3 minutes and baking is carried out at 200 to350° C. for 15 to 120 minutes. In order to carry out the steps of dryingand baking favorably, a substrate may be heated, of which temperature isset at 100 to 800° C. (preferably, 200 to 350° C.), though it depends ona material of the substrate and the like. Through this step, solvent insolution is volatilized or dispersant is removed chemically, and resinin the periphery cures and shrinks, thereby fusing and welding areaccelerated. This step is carried out in an oxygen atmosphere, anitrogen atmosphere, or in the air. However, this step is preferablycarried out in an oxygen atmosphere in which solvent dissolved ordispersed with a metal element is easily removed.

Note that the conductive layer formed by the droplet discharging methodis formed by randomly overlapping fine particles as conductorsthree-dimensionally. That is, the conductive layer is formed ofthree-dimensional agglomerate particles.

Accordingly, the surface thereof has fine projections and depressions.Further, as a grain diameter of the particles increases when the fineparticles are baked by the heat of the light absorption layer and theheat retention time thereof. Therefore, a layer having large projectionsand depressions is formed.

The laser light may be irradiated by using a continuous oscillation orpulse oscillation gas laser or a solid state laser. As the former gaslaser, an excimer laser, a YAG laser, and the like are used while alaser using crystals such as YAG and YVO₄ doped with Cr, Nd and the likeis used as the latter solid state laser. In view of the absorption rateof the laser light, it is preferable to use a continuous oscillationlaser. Further, what is called a hybrid laser irradiating method inwhich the pulse oscillation and the continuous oscillation are combinedmay be used as well. Although, depending on the heat resistance propertyof the substrate, it is preferable to apply heat treatment byirradiating laser light instantaneously for several micro seconds toseveral tens seconds. The rapid thermal annealing (RTA) is performed inan inert gas atmosphere by instantaneously applying heat for severalmicro seconds to several minutes by raising temperature rapidly using aninfrared lamp or a halogen lamp for irradiating ultraviolet light toinfrared light. This treatment is performed instantaneously, therefore,it is advantageous that only a thin film of the outermost surface can besubstantially heated and an under-layer film is not affected.

Next, a gate insulating film 302 is formed on the gate electrode 301.The gate insulating film 302 is formed of a single layer or amulti-layer structure of an insulating film containing silicon nitride,silicon oxide, and other silicon by using a thin film forming methodsuch as the plasma CVD method or the sputtering method. It is preferableto form the gate insulating layer in lamination in the order of asilicon nitride film (a silicon nitride oxide film), a silicon oxidefilm, and a silicon nitride film (a silicon nitride oxide film) from aside in contact with the gate electrode layer. With this structure, thegate electrode is in contact with the silicon nitride film, therefore, adeterioration due to oxidization can be prevented.

Next, the first semiconductor film 303 is formed on the gate insulatingfilm 302. As the first semiconductor film 303, a film having any one ofan amorphous semiconductor, a semi-amorphous semiconductor (alsoreferred to as an SAS) in which an amorphous state and a crystallinestate are mixed, a micro-crystalline semiconductor in which crystalgrains of 0.5 to 20 nm can be observed in an amorphous semiconductor,and a crystalline semiconductor is used. In particular, amicro-crystalline state in which crystal grains of 0.5 to 20 nm can beobserved is referred to as a micro crystal (μc). A film containingsilicon, silicon germanium (SiGe) and the like can be formed of asemiconductor film in thickness of 10 to 60 nm.

An SAS has an intermediate structure between the amorphous structure andthe crystalline structure (including a single crystalline andpolycrystalline structures), which is a semiconductor having a thirdstate that is stable in free energy. Also, SAS includes a crystallineregion having a short-range order and lattice distortion. A crystallineregion of 0.5 to 20 nm can be observed at least in a part of the film,and Raman spectrum is shifted to a low frequency side from 520 cm⁻¹ inthe case where silicon is a main component. Diffraction peaks of (111)and (220) are measured by X-ray diffraction, which are caused by Sicrystal grating. Also, hydrogen or halogen of at least 1 atomic % ormore is included in order to terminate a dangling bond.

An SAS is formed by depositing silicon gas by glow discharge (plasmaCVD). The silicon gas is typically SiH₄, as well as Si₂H₆, SiH₂Cl₂,SiHCl₃, SiC₄, SiF₄ and the like. By diluting the silicon gas withhydrogen, or hydrogen and one or a plurality of noble gas elements suchas helium, argon, krypton, and neon, SAS can be formed easily. Thesilicon gas is preferably diluted with a dilution ratio of 10 to 1000times. The reaction production of a film by the glow dischargedecomposition may be performed at a pressure of about 0.1 to 133 Pa. Theglow discharge may be formed with a power of 1 to 120 MHz, morepreferably with an RF power of 13 to 60 MHz. It is preferable that atemperature for heating the substrate be 300° C. or less, morepreferably 100 to 250° C.

Also, the crystalline semiconductor film can be formed by crystallizingan amorphous semiconductor film by heating or irradiating laser.Further, the crystalline semiconductor film may be formed directly. Inthis case, a fluorine gas such as GeF₄ or F₂ and a silane gas such asSiH₄ and Si₂H₆ are used to form a crystalline semiconductor filmdirectly by using heat or plasma.

Next, a conductive second semiconductor film 304 is formed. In the caseof forming an n-channel type TFT, the conductive second semiconductorfilm 304 is added an element from group 15 of the Periodic Table ofElements, that is representatively phosphor or arsenic. In the case offorming a p-channel type TFT, an element from group 13 of the PeriodicTable of Elements is added, that is representatively boron. The secondsemiconductor film 304 is deposited by the plasma CVD method by using asilicon gas added a gas containing elements of group 13 or 15 such asboron, phosphor, and arsenic. After forming the semiconductor film, theconductive second semiconductor film can be formed by applying solutioncontaining elements of group 13 or 15 on the semiconductor film andirradiating laser light. As the laser light, laser light irradiated froma known pulse oscillation laser or a continuous oscillation laser isappropriately used.

Next, a first mask pattern 305 is formed on the conductive secondsemiconductor film 304 by the droplet discharging method. It ispreferable that the first mask pattern 305 be formed of a heat resistanthigh molecular weight material which has an aromatic ring andheterocyclic ring as a main chain structure, has less aliphatic portionand contains hetero atom groups. Such a high molecular weight materialis representatively polyimide or polybenzimidazole. In the case of usingpolyimide, a compound containing polyimide is discharged from a nozzleon the second semiconductor film 304 and baked at 200° C. for 30minutes.

Next, a first semiconductor region 312 and a second semiconductor region313 having desired shapes are formed by etching the first semiconductorfilm 303 and the second semiconductor film 304 by using the first maskpattern 305. As an etching gas, chlorine gas represented by Cl₂, BCl₃,SiCl₄, CCl₄ and the like, a fluorine gas represented by CF₄, SF₆, NF₃,CHF₃ and the like, or O₂ can be used. The first mask pattern 305 isremoved after etching.

Next, a source electrode and a drain electrode 314 are formed on thesecond semiconductor region 313 by discharging a conductive material bythe droplet discharging method. As the conductive material, a materialsimilar to the material of the gate electrode 301 dissolved or dispersedin solvent can be used. Here, a compound containing Ag (hereinafterreferred to as Ag paste) is selectively discharged and drying and bakingtreatments are appropriately performed by irradiating laser light or byheat treatment to form each electrode in thickness of 600 to 800 nm.

By performing the baking treatment in O₂ atmosphere, an organicsubstance such as binder (heat curable resin) and the like contained inthe Ag paste is decomposed, thereby an Ag film containing few organicsubstances can be formed. Moreover, a surface of the film can beplanarized. By discharging the Ag paste under a low pressure, solvent inthe paste is evaporated and the subsequent heat treatment can be omittedor the heat treatment time can be shortened.

The source electrode and the drain electrode 314 are formed by etchingafter depositing a conductive film in advance by the sputtering methodand the like and forming a mask pattern by the droplet dischargingmethod. The mask pattern can be formed by using the aforementionedmaterial.

Next, as shown in FIG. 3C, the first semiconductor region 312 is exposedby etching the second semiconductor region with the source electrode andthe drain electrode 314 as masks. Here, the second semiconductor regionseparated by etching is denoted as a third semiconductor region 321. Forthe etching condition, the aforementioned condition is appropriatelyapplied. Further, in this embodiment mode, the second semiconductorregion is etched by using the source electrode and the drain electrode,however, the invention is not limited to this step and theaforementioned mask patterns may be formed to be used for etching thesemiconductor film.

Note that the first semiconductor region 312 can be formed by using anorganic semiconductor material by the printing method, the sprayingmethod, the spin coating method, the droplet discharging method and thelike. In this case, as the aforementioned etching step is not required,the number of steps can be reduced. It is preferable that the organicsemiconductor material used for the invention be a p-electron conjugatedhigh molecular weight material having a conjugated double bond as itsbackbone. Representatively, a fusible high molecular weight materialsuch as polythiophene, poly(3-alkylthiophene), polythiophene derivative,and pentacene can be used. As an organic semiconductor material that canbe used in the invention, there is a material which can be used forforming a second semiconductor region by processing after depositing afusible precursor. Such an organic semiconductor material which isformed through a precursor are polythienylene vinylene,poly(2,5-thienylene vinylene), polyacetylene, polyacetylene derivative,polyarylenevinylene, and the like.

In transforming the precursor into an organic semiconductor, a reactivecatalyst such as hydrogen chloride gas is added as well as heattreatment is applied. A solvent for dissolving these fusible organicsemiconductor material is representatively toluene, xylene,chlorobenzene, dichlorobenzene, anisole, chloroform, dichloromethane, γbutyl lactone, butylcellosolve, cyclohexane, NMP(N-methyl-2-pyrrolidone), cyclohexanone, 2-butanone, dioxane,dimethylformamide (DMF), or THF (tetrahydrofuran).

In the case of using an organic semiconductor for the firstsemiconductor region 312, a conductive layer formed of an organicconductive material such as polyacetylene, polyaniline, PEDOT(poly-ethylyenedioxythiophen), and PSS (poly-styrenesulphonate) can beformed. The conductive layer functions as a contact layer, or a sourceelectrode and a drain electrode.

Moreover, a conductive layer formed of metal elements can be usedinstead of the third semiconductor region 321. In this case, as mostorganic semiconductor materials have a p-type semiconductor whichtransports holes as carriers as a material to transport charges, it ispreferable to use metal of which work function is high in order toobtain an ohmic contact with the semiconductor layer.

In specific, metal, alloy or the like of gold, platinum, chromium,palladium, aluminum, indium, molybdenum, nickel and the like arepreferable. By using a conductive paste using these metal or alloymaterials, the conductive layer can be formed by the printing method,the roll coating method, and the droplet discharging method.

Further, the first semiconductor region formed of an organicsemiconductor material, a conductive layer formed of an organicconductive material, and a conductive layer formed of a metal elementmay be laminated.

In the case where the first semiconductor region 312 is formed of anSAS, a self-aligned structure that end portions of the source region andthe drain region and an end portion of the gate electrode form the sameplane as well as a structure that the source region and the drain regioncover the gate electrode. Furthermore, such a structure can be employedthat the source region and the drain region are formed at a certaindistance without covering the gate electrode. In this structure, an offcurrent can be reduced, therefore, in the case of using the TFT as aswitching element of a display device, contrast can be improved.Moreover, a multi-gate TFT may be used that the second semiconductorregion covers a plurality of gate electrodes. In this case also, the offcurrent can be reduced.

Next, it is preferable to deposit a passivation film on the sourceelectrode and the drain electrode 314. The passivation film can beformed of silicon nitride, silicon oxide, silicon nitride oxide, siliconoxynitride, aluminum oxynitride, or aluminum oxide, diamond-like carbon(DLC), nitrogen-containing carbon and other insulating materials by athin film forming method such as the plasma CVD method or the sputteringmethod.

Next, a second mask pattern 322 which has low wettability is formed. Thesecond mask pattern is a mask pattern used for forming an interlayerinsulating film that is formed in a subsequent step. The second maskpattern is formed of a similar material to that of the first maskpattern 103 described in Embodiment Mode 1.

Next, an interlayer insulating film 323 which has high wettability isformed by applying an insulating material in a region except for thesecond mask pattern. As the second mask pattern 322, an interlayerinsulating film which has higher wettability as compared to theinterlayer insulating film 323 and has a desired shape is formed. Theinterlayer insulating film 323 can be formed by using acryl resin,polyimide resin, polyester resin, epoxy resin, polyester, polyurethane,siloxane polymer, and polysilazane.

As shown in FIG. 3D, the second mask pattern 322 is removed by O₂ashing, thereby the source electrode and the drain electrode 314 areexposed. In the case where a passivation film is deposited on the sourceelectrode and the drain electrode, the passivation film is also removed.Subsequently, a conductive films 331 which connect to the sourceelectrode and the drain electrode respectively are formed. Here, a pasteobtained by dissolving or dispersing a conductive material in solvent isdischarged by the droplet discharging method and baked, thereby theconductive film is formed. As a conductive material for the conductivefilm, a similar material to that of the source electrode and the drainelectrode can be used. Note that the conductive film 331 functions as aconnecting wiring or a pixel electrode.

By the aforementioned steps, a channel-etch type TFT can be formed.

Embodiment Mode 5

In this embodiment mode, steps of forming a channel-protective type(channel-stopper type) TFT are described with reference to FIG. 4.

As shown in FIG. 4A, the gate electrode 301, the gate insulating film302, and the first semiconductor film 303 are formed on the substrate101 similarly to Embodiment Mode 4.

Next, a protective film 401 is formed in a region on the firstsemiconductor film 303 which overlaps the gate electrode 301. Theprotective film 401 can be formed by using a similar method and materialto that of the first mask pattern 305 described in Embodiment Mode 4.

Next, the second semiconductor film (a conductive semiconductor film)304 is deposited similarly to Embodiment Mode 4. Next, the first maskpattern 305 is formed similarly to Embodiment Mode 4.

Next, as shown in FIG. 4B, the first semiconductor film is etched byusing the first mask pattern, thereby the first semiconductor region 312is formed. Then, the second semiconductor film is etched to form thesecond semiconductor region 313. Next, the source electrode and thedrain electrode 314 are formed on the second semiconductor region 313.

Next, as shown in FIG. 4C, the second semiconductor region is etchedwith the source electrode and the drain electrode 314 as masks to exposethe protective film 401. At the same time, the second semiconductor filmis separated and the third semiconductor region 321 which functions asthe source region and the drain region is formed. In this embodimentmode, the second semiconductor film is etched by using the sourceelectrode and the drain electrode, however, the invention is not limitedto this step and the semiconductor film may be etched selectively byforming a mask similarly to the aforementioned first mask pattern.

Next, a passivation film is deposited on the source electrode and thedrain electrode 314 as shown in FIG. 4D. Then, after forming the secondmask pattern 322 which has low wettability, the interlayer insulatingfilm 323 is formed by using an insulating material which has highwettability.

Next, as shown in FIG. 4E, after removing the second mask pattern 322,the conductive films 331 which connect to the source electrode and thedrain electrode 314 respectively are formed similarly to Embodiment Mode4.

By the aforementioned steps, a channel-protective type TFT can beformed. The protective film 401 functions as a channel-protective film,therefore, the first semiconductor region which is to be a channelregion can be protected from damages due to overetching and the likewhen etching the semiconductor film to which impurities are added.Accordingly, a TFT which exhibits high mobility with a stable propertycan be obtained.

Embodiment Mode 6

In this embodiment mode, steps of forming a staggered TFT are describedwith reference to FIGS. 5A to 5E.

As shown in FIG. 5A, a source electrode and a drain electrode 501 areformed on the substrate 101. The source electrode and the drainelectrode 501 are formed by using a similar material to that of thesource electrode and the drain electrode 314 described in EmbodimentMode 4. The droplet discharging method, the printing method, theelectric field plating method, the PVD method, and the CVD method areused. In the case of using the PVD method or the CVD method, a maskpattern is formed by the method in Embodiment Mode 3 or thephotolithography process, and etching is applied to form the maskpattern into a desired shape.

Next, a conductive first semiconductor film 502 containing impurities ofgroup 13 or 15 of the Periodic Table of Elements is deposited. The firstsemiconductor film 502 is formed by a similar method to that for thesecond semiconductor film 303 in Embodiment Mode 4. Next, first maskpatterns 503 used for etching a part of the first semiconductor film 502on and between the source electrode and the drain electrode 501 areformed. The first mask pattern is formed by a similar material andmanufacturing method to those of the first mask pattern 305 inEmbodiment Mode 4.

Next, as shown in FIG. 5B, a source region and a drain region 511 areformed by etching the first semiconductor film by a known method usingthe first mask pattern 503. Subsequently, a second semiconductor film512 and a gate insulating film 513 are sequentially deposited. Thesecond semiconductor film 512 and the gate insulating film 513 are eachformed by appropriately using a material and a manufacturing method ofthe first semiconductor film 303 and the gate insulating film 302described in Embodiment Mode 4.

Next, a gate electrode 514 is formed between the source region and thedrain region 511. Subsequently, a second mask pattern 515 is formed. Thegate electrode 514 and the second mask pattern 515 are each formed byusing a material and a method for forming the gate electrode 301 and thefirst mask pattern 305 described in Embodiment Mode 4.

Next, as shown in FIG. 5C, the gate insulating film 513 is etched usingthe second mask pattern 515 to form a gate electrode 521. By forming asemiconductor region 522 by etching the second semiconductor film 512, apart of the source electrode and the drain electrode 501 is exposed.

Next, as shown in FIG. 5D, after forming a third mask pattern 531 whichhas low wettability on a surface of the source electrode and the drainelectrode 501 that are exposed, the interlayer insulating film 323 isformed by using a material which has high wettability. For the thirdmask pattern 531, the material and method for forming the second maskpattern 322 described in Embodiment Mode 4 is appropriately applied.

Next, as shown in FIG. 5E, after the third mask pattern 531 is removed,the conductive films 331 are formed.

By the aforementioned steps, a staggered TFT can be formed.

Embodiment Mode 7

In this embodiment, steps of forming a top gate coplanar TFT aredescribed with reference to FIGS. 6A to 6D.

As shown in FIG. 6A, a first insulating film 602 is deposited on thesubstrate 100. The first insulating film, which is provided forpreventing impurities from entering from the substrate 101 in the TFT,is formed of a silicon oxide film, a silicon nitride film, a siliconoxynitride film, a silicon nitride oxide film and the like by a knownmethod such as the PVD method and the CVD method. In the case where thesubstrate 101 is formed of a material from which impurities do not enterthe TFT, that is representatively quartz and the like, the firstinsulating film 602 is not required to be provided.

Next, a semiconductor region 603 is formed on the first insulating film602. The semiconductor region 603 is formed by etching the firstsemiconductor film 303 described in Embodiment Mode 4 by the methods inEmbodiment Mode 1 or 3, or a known etching method to be formed into adesired shape.

Next, after discharging solution 604 containing impurities of group 13or 15 of the Periodic Table of Elements on the semiconductor region 603,laser light 605 is irradiated. By this step, conductive semiconductorregions (a source region and a drain region) 611 can be formed as shownin FIG. 6B. Accordingly, it is preferable that the solution containingimpurities of group 13 or 15 of the Periodic Table of Elements bedischarged on the semiconductor region which is to be a source regionand a drain region later.

Next, as shown in FIG. 6B, a first mask pattern 612 which has lowwettability is formed on the source region and the drain region 611. Thefirst mask pattern 612 is provided for preventing the formation of agate insulating film and an interlayer insulating film that are formedlater, therefore, it is preferable to discharge the first mask pattern612 in a region where a contact hole and a connecting wiring are formedlater. The first mask pattern is formed by using a similar material andmethod for forming the second mask pattern.

Next, a material which has high wettability such as an organic SOG suchas siloxane polymer and polysilazane and an inorganic SOG are formed bythe droplet discharging method or the application method, and a gateinsulating film 613 is formed through the drying and baking treatment.Note that the organic SOG and the inorganic SOG are repelled by thefirst mask pattern due to their high wettability. In this step, thefirst mask pattern 612 is dried, thus a compound 622 of the first maskpattern is left in or on the semiconductor region 603.

As shown in FIG. 6C, a gate electrode 621 is formed on the gateinsulating film 613 between the source region and the drain region 611on the semiconductor region 603. The gate electrode 621 is formed byusing a similar material and method for forming the gate electrode 301described in Embodiment Mode 4.

Next, an interlayer insulating film 323 is formed by applying aninsulating material which has high wettability. As the compound 622 ofthe first mask pattern has low wettability, the insulating materialwhich has high wettability is repelled. Therefore, the interlayerinsulating film 323 can be formed selectively.

Next, conductive films 331 are formed.

By the aforementioned steps, a top gate coplanar TFT can be formed.

Embodiment Mode 8

In this embodiment mode, steps of forming a top gate coplanar TFT, whichare different than those of Embodiment Mode 7 are described withreference to FIGS. 25A to 25D. In Embodiment Mode 7, a TFT of which gateinsulating film is formed by the application method or the dropletdischarging method is described. In this embodiment, a TFT of which gateinsulating film is deposited by the CVD method or the PVD method isdescribed.

As shown in FIG. 25A, the semiconductor region 603 is formed similarlyto Embodiment Mode 7. After discharging solution 604 containingimpurities of group 13 or 15 of the Periodic Table of the Elements onthe semiconductor region 603 by the droplet discharging method, thelaser light 605 is irradiated and the conductive semiconductor regions(a source region and a drain region) 611 are formed as shown in FIG.25B.

Next, a gate insulating film 713 is deposited on the semiconductorregion and the first insulating film 602 by the CVD method or the PVDmethod. In this case, the gate insulating film is deposited on theentire surface of the substrate. Subsequently, the gate electrode 621 isformed on the gate insulating film 713 between the source region and thedrain region 611 on the semiconductor region 603.

Next, the first mask pattern 612 which has low wettability is formed ina region where the source region and the drain region 611 and the gateinsulating film 713 are overlapped as shown in FIG. 25C. The first maskpattern 612 is provided for preventing the formation of an interlayerinsulating film that is formed later, therefore, it is preferable todischarge the first mask pattern in a region where a contact hole and aconnecting wiring are formed later. Subsequently, the interlayerinsulating film 323 is formed by applying an insulating material whichhas high wettability. As the first mask pattern has high wettability,the insulating material which has high wettability is repelled by thefirst mask pattern.

Next, as shown in FIG. 25D, the first mask pattern 612 is removed by O₂ashing by using the interlayer insulating film 323 as a mask, thereby aportion of the gate insulating film 713 is exposed. Then, the exposedregion of the gate insulating film is etched to expose the source regionand the drain region. Subsequently, the conductive films 331 whichconnect to the source region and the drain region respectively areformed.

By the aforementioned steps, a top gate coplanar TFT can be formed.Also, by a similar step and a known method of forming a contact hole, abottom gate coplanar TFT can be formed.

Embodiment Mode 9

In this embodiment mode, one mode of a droplet discharging apparatuswhich can be used for forming the mask pattern in the aforementionedembodiment modes is described. In FIG. 20, a region where one panel 1930is formed on a substrate 1900 is shown by a dotted line.

A droplet discharging apparatus 1905 has a head which includes aplurality of nozzles. In this embodiment mode, three heads (1903 a, 1903b, and 1903 c) which has ten nozzles each are provided, however, thenumber of nozzles and heads can be set according to the process area andsteps.

Each head 1905 is connected to a control means 1907. A computer 1910controls the control means 1907, thereby a programmed pattern can bedrawn. A timing to draw may be, for example, determined on the basis ofa marker 1911 formed on the substrate 1900 fixed on a stage 1931.Alternatively, a base point may be determined on the basis of the edgesof the substrate 1900. This is detected by an image pickup means 1904such as a CCD, and converted into a digital signal by an video signalprocessing means 1909. The computer 1910 recognizes the digital signaland generates a control signal which is sent to the control means 1907.When drawing a pattern in this manner, it is preferable that a distancebetween a surface to form a pattern and a distal end of a nozzle be 0.1to 5 cm, preferably 0.1 to 2 cm, and more preferably about 0.1 mm. Witha short distance like this, landing precision of the droplets isincreased.

At this time, data on the pattern to be formed on the substrate 1900 isstored in a memory medium 1908. On the basis of this data, a controlsignal is sent to the control means 1907, which can control each head1903 a, 1903 b, and 1903 c independently. That is, each nozzle of thehead 1903 a, 1903 b, and 1903 c can discharge droplets of differentmaterials. For example, the nozzles of the heads 1903 a and 1903 bdischarge droplets containing an insulating material, and the nozzle ofthe head 1903 c can discharge droplets containing a conductive material.

Further, each nozzle of the head can also be controlled independently.As the nozzles can be controlled independently, droplets of differentmaterials can be discharged from specific nozzles. For example, a nozzlefor discharging droplets containing a conductive material and a nozzlefor discharging droplets containing a material for an insulatingmaterial can be provided for the head 1903 a, for example.

Furthermore, in the case of applying the droplet discharging treatmenton the large area such as a step of forming an interlayer insulatingfilm, it is preferable to discharge droplets containing a material foran interlayer insulating film from all the nozzles. Further, it ispreferable to discharge droplets containing a material for an interlayerinsulating film from all the nozzles of the plurality of heads.Consequently, throughput can be improved. It is needless to say that thedroplet discharging treatment can be applied to the large area byscanning a plurality of the nozzles each of which discharges dropletscontaining a material for an interlayer insulating film in the step offorming an interlayer insulating film.

By scanning the head in zigzag or back and forth, a pattern can beformed on a large mother glass. At this time, it is preferable to scanthe head and the substrate relatively a plurality of times. Whenscanning the head against the substrate, it is preferable to slant thehead against a direction of movement.

It is preferable that a width of the head be equivalent to a width ofone panel when forming a plurality of panels from a large mother glass.This is because a pattern can be formed by one scanning against a regionwhere one panel 1930 is formed, thus high throughput can be expected.

The width of the head may be smaller than the width of the panel. Atthis time, a plurality of heads of which widths are small may bedisposed in series to correspond to the width of one panel. By disposinga plurality of heads of which widths are small in series, a bending ofthe head can be prevented which is likely to occur as the width of thehead becomes large. It is needless to say that a pattern can be formedby scanning a head of which width is small a plurality of times.

It is preferable that a step of discharging droplets of the solution bythe droplet discharging method be performed under a low pressure. Thisis because the solvent in the solution is evaporated before thedischarged solution lands on the object being processed, thus steps ofdrying and baking of the solution can be omitted. Further, it ispreferable to perform under a low pressure since an oxide film and thelike are not formed on a surface of the conductor. A step of droppingthe solution may be performed in a nitrogen atmosphere and an organicgas atmosphere as well.

As the droplet discharging method, a piezoelectric method can beemployed. The piezoelectric method is utilized for an ink jet printerfor its superior controllability of droplets and high degree of freedomin the selection of ink. There are a vender type (representatively MLP(Multi Layer Piezo) type), a piston type (representatively an ML Chip(Multi Layer Ceramic Hyper Integrated Piezo Segments) type), a sidewalltype and a roof wall type in the piezoelectric method. Depending on thesolvent of the solution, the droplet discharging method using what iscalled a bubble-jet (Japanese registered trademark) method (thermalmethod) may be used in which the solution is pushed out by generatingbubbles by a heater.

Embodiment 1

Next, manufacturing methods of an active matrix substrate and a displaypanel comprising the active matrix substrate are described withreference to FIGS. 8 to 13. In this embodiment, a liquid crystal displaypanel is taken as an example of the display panel. FIGS. 8 to 10 eachshows a vertical sectional structure of a pixel portion and a connectingterminal portion schematically. FIGS. 11 to 13 each shows a planstructure corresponding to A-B and C-D.

As shown in FIG. 8A, an insulating film 801 in thickness of 100 nm isformed by oxidizing the surface of a substrate 800 at 400° C. Thisinsulating film functions as an etching stopper film of a conductivefilm which is formed later. Subsequently, a first conductive film 802 isformed on the insulating film 801 and first mask patterns 803 to 805 areformed by the droplet discharging method on the first conductive film.AN 100 glass substrate of Asahi Glass Co., Ltd. is used for thesubstrate 800 and a tungsten film in thickness of 100 nm is depositedfor the first conductive film 802 by sputtering using tungsten as atarget in an argon gas atmosphere. The first mask pattern is formed bydischarging polyimide by the droplet discharging method and applyingbaking treatment at 20° C. for 30 minutes. The first mask pattern isdischarged on a gate wiring layer, a gate electrode layer and aconnecting conductive layer which are formed layer.

Next, as shown in FIG. 8B, a portion of the first conductive film isetched by using the first mask patterns 803 to 805 to form a gate wiringlayer 811, a gate electrode layer 812, and a connecting conductive layer813. After that, the first mask patterns 803 to 805 are peeled off byusing a peeling solution.

Next, a gate insulating film 814 is deposited by the plasma CVD method.The gate insulating film 814 is formed of a silicon oxynitride film inthickness of 110 nm (H: 1.8%, N: 2.6%, O: 63.9%, Si: 31.7%) by theplasma CVD method using SiH4 and N₂O (flow rate SiH₄: N₂O=1:200) in achamber heated at 400° C.

Then, a first semiconductor film 815 and a second semiconductor film 816having an n-channel type are deposited. The first semiconductor film 815is formed of an amorphous silicon film in thickness of 150 nm by theplasma CVD method. Next, a semi-amorphous silicon film is formed inthickness of 50 nm by using silane gas and phosphine gas after removingan oxide film on the surface of the amorphous silicon film.

Next, second mask patterns 817 and 818 are formed on the secondsemiconductor film. The second mask patterns are formed by dischargingpolyimide on the second semiconductor film 816 by the dropletdischarging method and applying heat treatment at 200° C. for 30minutes. The second mask pattern 817 is discharged in a region where asemiconductor region is formed later.

Next, as shown in FIG. 8C, the second semiconductor film 816 is etchedby using the second mask pattern to form first semiconductor regions 821and 822 (a source region and a drain region). The second semiconductorfilm 816 is etched by using a mixture gas of which flow rate is CF₄:O₂=10:9. After that, the second mask patterns 817 and 818 are peeled offby using peeling solution.

Next, a third mask pattern 823 is formed. The third mask pattern isformed by discharging polyimide on portions of the first semiconductorregions 821 and 822, and the first semiconductor film 815 by the dropletdischarging method and applying heat treatment at 200° C. for 30minutes.

Next, as shown in FIG. 8D, the first semiconductor film 815 is etched byusing the third mask pattern 823 to form a second semiconductor region831. Note that FIG. 8D schematically shows a vertical sectionalstructure while FIG. 11 shows plan structure corresponding to A-B andC-D. After that, the third mask pattern 823 is peeled off by usingpeeling solution.

Next, as shown in FIG. 8E, a fourth mask pattern 832 which has lowwettability is formed. The fourth mask pattern which has low wettabilityis formed by discharging solution obtained by dissolving fluoride silanecoupling agent in solvent in a region where the gate insulating film 814and the connecting conductive layer 813 overlap. Note that the fourthmask pattern 832 is a protective film for forming a fifth mask patternwhich is used for forming contact holes in a region where a drainelectrode to be formed later and the connecting conductive layer 813 areconnected to each other.

Next, a fifth mask pattern 833 is formed by using a material which hashigh wettability. the fifth mask pattern is a mask for forming a firstcontact hole, which is formed by discharging polyimide by the dropletdischarging method and applying heat treatment at 200° for 30 minutes.At this time, as the fourth mask pattern 832 has low wettability whilethe fifth mask pattern 833 has high wettability, the fifth mask pattern833 is not formed in a region where the fourth mask pattern is formed.

Next, as shown in FIG. 9A, the fourth mask pattern 832 is removed byoxygen ashing to expose a portion of the gate insulating film.Subsequently, the exposed gate insulating film is etched by using thefifth mask pattern 833. The gate insulating film is etched by usingCHF₃. After that, the fifth mask pattern 833 is peeled off by oxygenashing and etching using peeling solution.

Next, a source wiring layer 841 and a drain wiring layer 842 are formedby the droplet discharging method. At this time, the drain wiring layer842 is formed so as to be connected to the second semiconductor region822 and the connecting conductive layer 813. The source wiring layer 841and the drain wiring layer 842 are formed by discharging solutiondispersed with Ag (silver) particles and applying heat treatment at 100°C. for 30 minutes for drying, and baking at 230° C. for one hour in anatmosphere containing 10% of oxygen. Next, a protective film 843 isformed. The protective film is formed of a silicon nitride film inthickness of 100 nm by the sputtering method using a silicon target in amixed gas atmosphere of argon and nitrogen (flow rate Ar: N₂=1:1).

FIG. 12 shows a plan view corresponding to A-B and C-D of FIG. 9A.

Next, as shown in FIG. 9B, sixth mask patterns 851 and 852 which havelow wettability are formed in a region where the protective film 843 andthe connecting conductive layer 813 are overlapped, and a region wherethe gate wiring layer and the source wiring layer are connected to aconnecting terminal. After that, an interlayer insulating film 853 isformed. The sixth mask pattern is a mask for an interlayer insulatingfilm which is formed later. After discharging the solution obtained bydissolving fluoride silane coupling agent in solvent by the dropletdischarging method as the sixth mask pattern and discharging polyimideas an insulating material which has high wettability by the dropletdischarging method, both layers are baked at 200° C. for 30 minutes and300° C. for one hour respectively.

Next, as shown in FIG. 9C, after etching the sixth mask pattern 851 byusing mixed gas of CF₄, O₂, and He (flow rate CF₄:O₂ :He=8:12:7),portions of the protective film 843 and the gate insulating film 814 areetched to form a second contact hole. By this etching step, theprotective film 843 and the gate insulting film 814 in a region wherethe gate wiring layer and the source wiring layer are connected to aconnecting terminal are etched.

After depositing the second conductive film 861, a seventh mask patternis formed. The second conductive film is formed by depositing indium tinoxide (ITO) containing silicon oxide in thickness of 110 nm by thesputtering method, dropping polyimide by the droplet discharging methodin a region where a pixel electrode is formed later, and baking at 200°C. for 30 minutes.

In this embodiment, a pixel electrode is formed of ITO containingsilicon oxide for manufacturing a light-transmitting liquid crystaldisplay panel, however, the pixel electrode may be formed by forming apredetermined pattern using a compound containing indium tin oxide(ITO), zinc oxide (ZnO), tin oxide (SnO₂) and the like and applyingbaking treatment. In the case of manufacturing a reflective type liquidcrystal display panel, a compound containing metal particles such as Ag(silver), Au (gold), Cu (copper), W (tungsten), and Al (aluminum) can beused.

Next, as shown in FIG. 9D, a pixel electrode 871 is formed by etchingthe second conductive film by using the seventh mask pattern. Throughthis etching step, the second conductive film formed in a region wherethe gate wiring layer and the source wiring layer are connected to theconnecting terminal is etched as well. After that, the seventh maskpattern is peeled off by using peeling solution. Note that FIG. 13 showsa plan view corresponding to A-B and C-D in FIG. 9D.

The pixel electrode 871 is connected to the connecting conductive layer813 through the second contact hole. The connecting conductive layer 813is connected to the drain wiring layer 842, therefore, the pixelelectrode 871 and the drain wiring layer 842 are electrically connected.In this embodiment, the drain wiring layer 842 is formed of silver (Ag)and the pixel electrode 871 is formed of ITO containing silicon oxide,however, these are not directly connected to each other. Accordingly,the silver is not oxidized and the drain wiring layer 842 and the pixelelectrode 871 can be electrically connected without increasing contactresistance.

Further, the pixel electrode can be formed by selectively dischargingsolution containing a conductive material by the droplet dischargingmethod, without the etching step. Moreover, the pixel electrode can beformed by discharging conductive solution after forming a mask patternwhich has low wettability in a region where the pixel electrode is notformed. In this case, the mask pattern can be removed by O₂ ashing. Themask pattern may be left without being removed.

By the aforementioned steps, an active matrix substrate can be formed.

Next, as shown in FIG. 10A, an insulating film is deposited by theprinting method and the spin coating method so as to cover the pixelelectrode 871, thus an alignment film 872 is formed through rubbingtreatment. Note that the alignment film 872 can be formed by an obliquedeposition method as well. Subsequently, a sealant 873 is formed in aperiphery of the pixels by the droplets discharging method.

Next, as shown in FIG. 10B, a liquid crystal material is dropped insidea closed loop formed of the sealant 873 by a dispenser method (droppingmethod).

Here, FIG. 28 shows a step of dropping a liquid crystal material by OneDrop Filling method on an active matrix substrate. FIG. 28A shows aperspective view of a step of dropping a liquid crystal material by adispenser 2701 while FIG. 28B is a sectional view of A-B in FIG. 28A.

A liquid crystal material 2704 is dropped or discharged from thedispenser 2701 so as to cover the pixel portion 2703 surrounded by thesealant 2702. The dispenser 2701 may be moved or the substrate 2700 maybe moved with the dispenser 2701 fixed to form a liquid crystal layer.Further, a liquid crystal may be dropped at a time by providing aplurality of the dispensers 2701.

As shown in FIG. 28B, the liquid crystal material 2704 is selectivelydropped or discharged in a region surrounded by the sealant 2702.

Next, the substrate is adhered in a vacuum atmosphere with a countersubstrate 881 on which an alignment film 883 and a counter electrode 882are provided, irradiated with ultraviolet ray for curing, thus a liquidcrystal layer 884 is formed by filling a liquid crystal material.

Fillers may be mixed in the sealant 873 and a color filter, a shieldingfilm (black matrix) or the like may be formed on the counter substrateas well. Further, the liquid crystal layer 884 may be formed by adipping method that the counter substrate is adhered and then liquidcrystals are filled by using a capillary phenomenon.

Although the liquid crystal material is dropped on the pixel portionhere, a substrate having the pixel portion may be adhered after droppingthe liquid crystal material on the counter substrate side.

Next, as shown in FIG. 10C, a liquid crystal display panel can be formedby adhering connecting terminals (a connecting terminal 886 connected tothe gate wiring layer, a connecting terminal connected to the sourcewiring layer which is not shown) through an anisotropic conductive layer885 to the gate wiring layer 811 and the source wiring layer (not shown)respectively.

The interlayer insulating film 853 and the alignment film 872 can beformed on the entire surface of the substrate. In this case, afterforming a mask by the droplet discharging method before forming thesealant, these insulating films are removed by a known etching method,thereby the source wiring layer and the gate wiring layer are exposed.

By the aforementioned steps, a liquid crystal display panel can bemanufactured. Note that a protective circuit for preventingelectrostatic discharge, representatively a diode and the like may beprovided between the connecting terminal and the source wiring (gatewiring) or in the pixel portion. In this case, by forming a diode in asimilar step as described above and connecting the gate wiring layer ofthe pixel portion and a drain wiring layer or a source wiring layer ofthe diode, an operation as a diode can be obtained as well.

Note that any of Embodiment Modes 1 to 9 can be applied to thisembodiment. In this embodiment, a manufacturing method of a liquidcrystal display panel is described as a display panel, however, theinvention is not limited to this and can be applied to a light emittingdisplay device having a light emitting substance formed of an organicmaterial or an inorganic material as a light emitting layer, and anactive display panel such as a DMD (Digital Micromirror Device), a PDP(Plasma Display Panel), an FED (Field Emission Display), and anelectrophoresis display device (electronic paper).

Embodiment 2

In this embodiment, a display panel using a passive matrix substrate isdescribed with reference to FIGS. 26A to 26D. In this embodiment, an EL(Electro Luminescence) display panel (a light emitting display panel) isdescribed as an example of a display panel.

As shown in FIG. 26A, a first pixel electrode 2602 formed of alight-transmitting conductive film is formed on a substrate 2601 whichtransmits light. A plurality of the first pixel electrodes 2602 areprovided in parallel. In this embodiment, the first pixel electrode isformed by drawing while discharging solution in parallel containing acomposition of ITO and ZnO₂ and baking.

Next, a plurality of first insulating films 2603 are formed which crossthe first electrode at even intervals on the first pixel electrode 2602.As the first insulating film, an insulating film such as SiO₂ and SiN isformed and etched in parallel.

Next, as shown in FIG. 26B, a mask pattern 2611 which has lowwettability is formed in a region where an organic EL layer is formedlater, that is a portion of the adjacent first insulating films 2603 anda region therebetween. As the mask pattern which has low wettability,solution containing FAS is discharged by the droplet discharging method.

Note that the organic EL layer contains a material formed of aninorganic material in some cases.

Next, by discharging solution which has high wettability in a regionwhere the mask pattern which has low wettability is not formed, that isan outer edge of the mask pattern, drying and baking treatment areperformed to form a second insulating film 2612. In this embodiment,polyimide is discharged.

According to the composition, viscosity, and surface tension of thesolution which has high wettability, the second insulating film 2612 ofwhich cross section has a reverse tapered shape can be formed as shownin FIG. 26B.

Depending on the composition, viscosity, and surface tension of thesolution which has high wettability, the second insulating film 2631 ofwhich cross section has a forward tapered shape can be formed as shownin FIG. 27.

Next, as shown in FIG. 26C, the mask pattern 2611 is removed by O₂ashing. Next, by evaporating an organic EL material, an organic EL layer2621 is formed on the adjacent first insulating films 2603 and a regiontherebetween. By this step, an organic EL material 2622 is deposited onthe second insulating film 2612 as well.

Next, as shown in FIG. 26D, a second pixel electrode 2623 is formed bydepositing a conductive material. By this step, a second conductivematerial 2624 is deposited on the organic EL material 2622 formed on thesecond insulating film 2612. In this embodiment, the second pixelelectrode is formed of Al, Al-Li alloy, Ag-Mg alloy and the like.

In the case where the second insulating film 2612 has a reverse taperedshape in its cross section, the organic EL layer 2621 and the pixelelectrode 2623 are prevented from being deposited by a head of thesecond insulating film 2612, therefore, they can be separated by thesecond insulating film 2612 without using a known photolithographyprocess.

In the case where the second insulating film 2631 has a forward taperedshape in its cross section, the organic EL material 2622 and the secondpixel electrode 2623 can be formed by discharging an organic EL materialand a conductive material between each of the second insulating films2631 by the droplet discharging method as shown in FIG. 27B.

After that, an organic EL display panel can be manufactured bydepositing a protective film.

Note that any of Embodiment Modes 1 to 9 can be applied to thisembodiment. In this embodiment, a manufacturing method of an organic ELdisplay panel is described as a display panel, however, the invention isnot limited to this and can be applied to a passive type display devicesuch as a liquid crystal display device, a DMD (Digital MicromirrorDevice), a PDP (Plasma Display Panel), an FED (Field Emission Display),and an electrophoresis display device (electronic paper).

In this embodiment, an insulating film for insulating an organic ELlayer can be formed without using a known photolithography.

Embodiment 3

In this embodiment, mounting of driver circuits (a signal driver circuit1402 and scan driver circuits 1403 a and 1403 b) to a display paneldescribed in the aforementioned embodiment is described with referenceto FIGS. 14A to 14C.

As shown in FIG. 14A, the signal driver circuit 1402 and the scan drivercircuits 1403 a and 1403 b are mounted in the periphery of the pixelportion 1401. In FIG. 14A, IC chips 1405 are mounted on a substrate 1400as the signal driver circuit 1402 and the scan driver circuits 1403 aand 1403 b and the like. Then, the IC chips 1405 and an external circuitare connected through an FPC (Flexible Printed Circuit).

As shown in FIG. 14B, the pixel portion 1401 and the scan drivercircuits 1403 a and 1403 b and the like are integrally formed on thesubstrate and the signal driver circuit 1402 and the like are mounted asan IC chip independently in some cases where TFTs are formed of an SASor a crystalline semiconductor. In FIG. 14B, the IC chip 1405 is mountedon the substrate 1400 as the signal driver circuit 1402 by the COGmethod. The IC chip 1405 and an external circuit are connected throughan FPC 1406.

As shown in FIG. 14C, the signal driver circuit 1402 and the like aremounted by a TAB method in some cases in stead of the COG method. The ICchip 1405 and an external circuit are connected through the FPC 1406. InFIG. 14C, the signal driver circuit is mounted by the TAB method,however, the scan driver circuit may be mounted by the TAB method aswell.

By mounting the IC chip by the TAB method, a large pixel portion can beprovided relatively to the substrate and a narrower frame can berealized.

The IC chip is formed by using a silicon wafer, however, an IC formed ona glass substrate (hereinafter referred to as a driver IC) may beprovided instead of the IC chip. The IC chip is taken out of a circularsilicon wafer, therefore, a mother substrate is restricted in shape. Adriver IC, on the other hand, is advantageous in improving productivitysince a mother substrate is glass of which shape is not restricted.Therefore, a shape and a size of a driver IC can be freely designed. Inthe case of forming a driver IC as its long side being 15 to 80 mm, arequired number thereof can be reduced as compared to the case ofmounting an IC chip. As a result, the number of connecting terminals canbe reduced, which improves a production yield.

A driver IC can be formed by using a crystalline semiconductor formed ona substrate, which can be formed by irradiating continuous oscillationlaser light. A semiconductor film obtained by irradiating the continuousoscillation laser light has less crystal defects and crystal grainshaving large diameter. As a result, a transistor having such asemiconductor film has favorable mobility and response which enables ahigh speed drive and is preferable for a driver IC.

Embodiment 4

In this embodiment, a mounting method of the driver circuits (the signaldriver circuit 1402 and the scan driver circuits 1403 a and 1403 b) to adisplay panel described in the aforementioned embodiment is describedwith reference to FIGS. 15A to 15D. the driver circuits may be mountedby a connecting method using an anisotropic conductive material, a wirebonding method and the like, one of which is described with reference toFIGS. 15A to 15D. In this embodiment, an example of using a driver ICfor the signal driver circuit 1402 and the scan driver circuits 1403 aand 1403 b is described. An IC chip can be used appropriately instead ofthe driver IC.

FIG. 15A shows an example of mounting a driver IC 1703 on an activematrix substrate 1701 by using an anisotropic conductive material. Eachof the source wiring, the gate wiring (not shown) and the like andelectrode pads 1702 a and 1702 b as extraction electrodes of the wiringsare formed on the active matrix substrate 1701.

Connecting terminals 1704 a and 1704 b are provided on the surface ofthe driver IC 1703 and a protective insulating film 1705 is formed inthe periphery thereof.

The driver IC 1703 is fixed on the active matrix substrate 1701 with ananisotropic conductive adhesive 1706 and the connecting terminals 1704 aand 1704 b, and the electrode pads 1702 a and 1702 b are electricallyconnected through conductive particles 1707 contained in the anisotropicconductive adhesive. The anisotropic conductive adhesive is adhesiveresin containing dispersed conductive particles (particle diameter ofabout 3 to 7 μm), which are, for example, epoxy resin, phenol resin andthe like. The conductive particles (particle diameter of about severalto several hundreds μm) are formed of alloy particles of one or aplurality of elements selected from gold, silver, copper, palladium, orplatinum. Also, the particles having a multi-layer structure of theseelements may be used. Moreover, particles obtained by coating resinparticles with alloy of one or a plurality of elements selected fromgold, silver, copper, palladium, or platinum may be used as well.

Instead of the anisotropic conductive adhesive, an anisotropicconductive film formed in film on the base film may be transferred to beused. The anisotropic conductive film is also dispersed with similarconductive particles to the anisotropic conductive adhesive. By usingthe conductive particles 1707 of suitable size and density mixed in theanisotropic conductive adhesive 1706, the driver IC can be mounted tothe active matrix substrate in such a mode. This mounting method issuitable for the mounting methods of the driver ICs of FIGS. 14A and14B.

FIG. 15B shows an example of a mounting method using a contractile forceof organic resin, in which buffer layers 1711 a and 1711 b are formed ofTa, Ti and the like on the surface of the connecting terminal of thedriver IC, and Au is formed in thickness of about 20 μm by anelectroless plating method and the like to form bumps 1712 a and 1712 b.By providing light curable insulating resin 1713 between the driver ICand the active matrix substrate, a contractile force of light curableresin can be utilized to mount the electrodes welded in pressure. Thismounting method is suitable for a mounting method of the driver ICs ofFIGS. 14A and 14B.

As shown in FIG. 15C, the driver IC 1703 is fixed on the active matrixsubstrate 1701 by an adhesive 1721, and the connecting terminal of thedriver IC and the electrode pads 1702 a and 1702 b may be connected bywirings 1722 a and 1722 b. Then, organic resin 1723 is used for sealing.This mounting method is suitable for a mounting method of the driver ICsof FIGS. 14A and 14B.

As shown in FIG. 15D, a wiring 1732 on an FPC (Flexible Printed Circuit)1731 may be provided with the driver IC 1703 through the anisotropicconductive adhesive 1706 containing the conductive particles 1708. Thisstructure is quite effective for applying to an electronic apparatussuch as a portable terminal whose housing is limited in size. Thismounting method is suitable for the mounting methods of the driver IC ofFIG. 14C.

The mounting method of the driver IC is not particularly limited and aknown COG method, the wire bonding method, the TAB method, or reflowprocessing using a solder bump can be employed. In the case of applyingthe reflow processing, it is preferable to use plastic which has highheat resistance such as a polyimide substrate, an HT substrate (NipponSteel Chemical Group Co., Ltd.), and ARTON (JSR Corporation) formed ofnorbornene resin having a polarity group.

Embodiment 5

In the liquid crystal display panel described in Embodiment 4 of whichsemiconductor layer is formed of an SAS, description is made on a drivercircuit on a scan line side formed on the substrate 1400 as shown inFIGS. 14B and 14C.

FIG. 21 is a block diagram of a scan driver circuit formed of n-channelTFTs using an SAS of which electric field effect mobility is 1 to 15cm²/V·sec.

In FIG. 21, a block denoted by 1500 corresponds to a pulse outputcircuit which outputs sampling pulses for one stage and a shift registeris formed of n pulse output circuits. A pixel is connected to an end ofa buffer circuit 1501.

FIG. 22 shows a specific configuration of the pulse output circuit 1500which is formed of n-channel TFTs 3601 to 3612. In consideration ofoperating characteristics of the n-channel TFT using an SAS, the size ofthe TFT may be determined. For example, provided that a channel lengthis 8 μm, a channel width can be set in a range from 10 to 80 μm.

FIG. 23 shows a specific configuration of the buffer circuit 1501. Thebuffer circuit is formed of n-channel TFTs 3621 to 3636 as well. Inconsideration of operating characteristics of the n-channel TFT using anSAS, the size of the TFT may be determined. For example, provided that achannel length is 10 μm, a channel width can be set in a range from 10to 1800 μm.

Embodiment 6

In this embodiment, a description is made on a display module. Here, aliquid crystal module is described as an example of the display modulewith reference to FIG. 16.

In the liquid crystal module shown in FIG. 16, an active matrixsubstrate 1601 and a counter substrate 1602 are fixed with a sealant1600, with a pixel portion 1603 and a liquid crystal layer 1604interposed therebetween which form a display region.

A colored layer 1605 is required in the case of performing a colordisplay. In the case of an RGB method, colored layers corresponding tored, green, and blue are provided for each pixel. Polarizers 1606 and1607 are provided outside the active matrix substrate 1601 and thecounter substrate 1602. A protective film 1616 is formed on the surfaceof the polarizer 1606 for alleviating external shocks.

The connecting terminal 1608 provided on the active matrix substrate1601 is connected to a wiring substrate 1610 through an FPC 1609. Apixel driver circuit (an IC chip, a driver IC and the like) 1611 isprovided for the FPC and the connecting wiring. The wiring substrate1610 is incorporated with an external circuit 1612 such as a controlcircuit and a power source circuit.

A cold cathode tube 1613, a reflector 1614, and an optical film 1615 area backlight unit as a light source which projects light to a liquidcrystal display panel. The liquid crystal panel, the light source, thewiring substrate, the FPC and the like are maintained and protected by abezel 1617.

Embodiment 7

In this embodiment, an exterior of a light emitting display module isdescribed with reference to FIGS. 30A and 30B as an example of a displaymodule. FIG. 30A is a top plan view of a panel formed of a firstsubstrate and a second substrate sealed with a first sealant 1205 and asecond sealant 1206. FIG. 30B is a sectional view along A-A′ in FIG.30A.

In FIG. 30A, reference numeral 1201 shown by a dotted line denotes asignal (source line) driver circuit, 1202 denotes a pixel portion, and1203 denotes a scan (gate line) driver circuit. In this embodiment, asignal driver circuit 1201, a pixel portion 1202, and a scan drivercircuit 1203 are in a region which is sealed by the first sealant andthe second sealant. It is preferable to use epoxy resin which has highviscosity containing fillers as the first sealant. It is. preferable touse epoxy resin which has low viscosity as the second sealant. It isalso preferable that the first sealant 1205 and the second sealant 1206do not transmit moisture or oxygen as much as possible.

Further, a drying agent may be provided between the pixel portion 1202and the sealant 1205. In the pixel portion, a drying agent may beprovided on the scan line or the signal line. As the drying agent, it ispreferable to use a substance which absorbs moisture (H₂O) by a chemicalabsorption such as oxide of alkali earth metal such as calcium oxide(CaO) and barium oxide (BaO). However, a substance which absorbsmoisture by physical absorption such as zeolite and silica gel may beused as well.

In addition, resin which has high moisture permeability containingparticles of drying agent can be fixed on the second substrate 1204.Here, the resin which has high moisture permeability is, for example,acryl resin such as ester acrylate, ether acrylate, ester urethaneacrylate, ether urethane acrylate, butadiene urethane acrylate, specialurethane acrylate, epoxy acrylate, amino resin acrylate, and acryl resinacrylate. Besides, epoxy resin such as bisphenol A type liquid epoxyresin, bisphenol A type solid epoxy resin, epoxy resin containingbromine, bisphenol F type resin, bisphenol AD type resin, phenol resin,cresol resin, novolac type resin, cycloaliphatic ring epoxy resin,Epi-Bis type epoxy resin, glycidyl ester resin, glycidyl amine resin,heterocyclic epoxy resin, and modified epoxy resin can be used. Also,other substances may be used as well. An inorganic substance such assiloxane polymer, polyimide, PSG (Phosphor Silicate Glass), and BPSG(Boron Phosphorous Silicon Glass) may be used.

By providing a drying agent in a region overlapped with the scan lineand fixing resin which has high moisture permeability containingparticles of drying agent on the second substrate, it can be suppressedthat moisture enters to a display element and a deterioration causedthereby, without decreasing the aperture ratio.

Note that reference numeral 1210 denotes a connecting wiring fortransferring a signal inputted to the signal driver circuit 1201 and thescan driver circuit 1203, which receives a video signal and a clocksignal from an FPC (Flexible Printed Circuit) 1209 as an external inputterminal through a connecting wiring 1208.

Next, a sectional structure is described with reference to FIG. 30B. Adriver circuit and a pixel portion are formed on a first substrate 1200,which have a plurality of semiconductor elements such as TFTs. Thesignal driver circuit 1201 as the driver circuit and the pixel portion1202 are shown. Note that the signal driver circuit 1201 comprises aCMOS circuit formed of a combination of an n-channel type TFT 1221 and ap-channel type TFT 1222.

In this embodiment, TFTs of a signal driver circuit, a scan drivercircuit, and a pixel portion are formed on the same substrate.Accordingly, the volume of a light emitting display device can bereduced.

The pixel portion 1202 is formed of a plurality of pixels including aswitching TFT 1211, a driving TFT 1212, and a first pixel electrode(anode) 1213 formed of a reflective conductive film electricallyconnected to a drain of the driving TFT 1212.

An interlayer insulating film 1220 for these TFTs 1211, 1212, 1221, and1222 can be formed by using a material containing an inorganic material(silicon oxide, silicon nitride, silicon oxynitride and the like), andan organic material (polyimide, polyamide, polyimide amide,benzocyclobutene, or siloxane polymer) as a main component. By usingsiloxane polymer as a source material of the interlayer insulating film,an insulating film having a structure of silicon oxygen as a backbonestructure and hydrogen and/or alkyl group as a side chain can beobtained.

Further, an insulator (referred to as a bank, a partition, a barrier,and the like) 1214 is formed at both ends of the first pixel electrode(anode) 1213. In order to obtain a favorable coverage of a film for theinsulator 1214, the insulator 1214 is formed so that its top portion andthe bottom portion have curved surfaces having curvatures. The insulator1214 can be formed by using a material containing inorganic material(silicon oxide, silicon nitride, silicon oxynitride, silicon nitrideoxide and the like) or an organic material (polyimide, polyamide,polyimide amide, benzocyclobutene, or siloxane polymer) as a maincomponent. Further, by using siloxane polymer as a source material forthe insulator, an insulating film having silicon and oxygen as abackbone structure and hydrogen and/or alkyl group as a side chain canbe obtained. Also, the insulator 1214 may be covered with an aluminumnitride film, an aluminum nitride oxide film, a thin film containingcarbon as a main component, or a protective film (planarizing layer)formed of a silicon nitride film. By using an organic material dissolvedor dispersed with a material which absorbs visible light, such as ablack pigment and dye, stray light from a light emitting element whichis formed later can be absorbed. As a result, contrast of each elementis improved. Further, by providing the interlayer insulating film 1220formed of an insulator which shields light, a light shielding effect canbe obtained with the insulator 1214.

A layer 1215 containing a light emitting substance is selectively formedon the first pixel electrode (anode) 1213 by using evaporation of anorganic compound material.

The layer containing a light emitting substance can have a knownstructure appropriately. Here, a structure of the layer 1215 containinga light emitting substance is described with reference to FIGS. 31A to31F.

FIG. 31A shows an example of forming a first pixel electrode 11 using alight-transmitting oxide conductive material which contains 1 to 15atomic % of silicon oxide. A layer 16 containing light emittingsubstances in which a hole injection layer or a hole transporting layer41, a light emitting layer 42, an electron transporting layer or anelectron injection layer 43 are laminated is provided thereon. A secondpixel electrode 17 is formed of a first electrode layer 33 containingalkali metal or alkali earth metal such as LiF and MgAg and a secondelectrode layer 34 formed of a metal material such as aluminum. A pixelhaving this structure can emit light from the first pixel electrode 11side as shown by an arrow in FIG. 31A.

FIG. 31B shows an example of emitting light from the second pixelelectrode 17. The first pixel electrode 11 is formed of a firstelectrode layer 35 formed of metal such as aluminum and titanium, or ametal material containing the aforementioned metal and nitrogen at aconcentration equal to or less than the stoichiometric compositionratio, and a second electrode layer 32 formed of oxide conductivematerial containing silicon oxide at a concentration of 1 to 15 atomic%. The layer 16 containing light emitting substances in which the holeinjection layer or the hole transporting layer 41, the light emittinglayer 42, the electron transporting layer or the electron injectionlayer 43 are laminated is provided thereon. The second pixel electrode17 is formed of a third electrode layer 33 containing alkali metal oralkali earth metal such as LiF and CaF and a fourth electrode layer 34formed of a metal material such as aluminum. By forming both of thelayers in thickness of 100 m or less so as to be able to transmit light,light can be emitted from the second pixel electrode 17.

FIG. 31E shows an example of emitting light in both directions, that isfrom the first electrode and the second electrode. A light-transmittingconductive film which has high work function is used for the first pixelelectrode 11 while a light-transmitting conductive film which has lowwork function is used for the second pixel electrode 17.Representatively, the first pixel electrode 11 is formed of an oxideconductive material containing silicon oxide at a concentration of 1 to15 atomic % and the second pixel electrode 17 is formed of the thirdelectrode layer 33 containing alkali metal or alkali earth metal such asLiF and CaF and the fourth electrode layer 34 formed of a metal materialsuch as aluminum in thickness of 100 nm or less respectively.

FIG. 31C shows an example of emitting light from the first pixelelectrode 11 in which layers containing light emitting substances arelaminated in the order of an electron transporting layer or the electroninjection layer 43, the light emitting layer 42, the hole injectionlayer or the hole transporting layer 41. The second pixel electrode 17is formed of the second electrode layer 32 formed of an oxide conductivematerial containing silicon oxide at a concentration of 1 to 15 atomic %and the first electrode layer 35 formed of metal such as aluminum andtitanium or a metal material containing the aforementioned metal andnitrogen at a concentration equal to or less than the stoichiometriccomposition ratio in this order from the layer 16 containing a lightemitting substance. The first pixel electrode 11 is formed of the thirdelectrode layer 33 containing alkali metal or alkali earth metal such asLiF and CaF and the fourth electrode layer 34 formed of a metal materialsuch as aluminum. By forming both of the layers in thickness of 100 m orless so as to be able to transmit light, light can be emitted from thefirst pixel electrode 11.

FIG. 31D shows an example of emitting light from the second pixelelectrode 17 in which layers containing light emitting substances arelaminated in the order of the electron transporting layer or theelectron injection layer 43, the light emitting layer 42, the holeinjection layer or the hole transporting layer 41. The first pixelelectrode 11 has a similar structure as the second pixel electrode ofFIG. 31A and is formed in enough thickness to reflect light emitted fromthe layer containing light emitting substances. The second pixelelectrode 17 is formed of an oxide conductive material containingsilicon oxide at a concentration of 1 to 15 atomic %. By forming thehole injection layer or the hole transporting layer 41 using a metaloxide as an inorganic substance (representatively molybdenum oxide orvanadium oxide), a hole injection property is improved as oxygen broughtin when forming the second pixel electrode 17 is supplied, thus adriving voltage can be decreased.

FIG. 31F shows an example of emitting light in both directions, that isfrom the first pixel electrode and the second pixel electrode. Alight-transmitting conductive film which has low work function is usedfor the first pixel electrode 11 and a light-transmitting conductivefilm which has high work function is used for the second pixel electrode17. Representatively, the first pixel electrode 11 is formed of thethird electrode layer 33 containing alkali metal or alkali earth metalsuch as LiF and CaF, and the fourth electrode layer 34 formed of a metalmaterial such as aluminum, and the second pixel electrode 17 is formedof an oxide conductive material containing silicon oxide at aconcentration of 1 to 15 atomic %.

In this manner, a light emitting element 1217 formed of the first pixelelectrode (anode) 1213, the layer 1215 containing light emittingsubstances, and the second pixel electrode (cathode) 1216 is formed asshown in FIG. 30B. The light emitting element 1217 emits light to thesecond substrate 1204 side.

For sealing the light emitting element 1217, a protective laminatedlayer 1218 is formed. The protective laminated layer 1218 is formed by alamination of a first inorganic insulating film, a relaxation film, anda second inorganic insulating film. Next, the protective laminated layer1218 and the second substrate 1204 are adhered with a first sealant 1205and a second sealant 1206. Note that it is preferable that the secondsealant be dropped by using an apparatus for dropping a sealant such asan apparatus for dropping liquid crystals as shown in FIG. 28 ofEmbodiment 1. After applying a sealant on an active matrix substrate bydropping or discharging from a dispenser, the second substrate and theactive matrix substrate can be adhered in vacuum and sealed byultraviolet curing.

Note that a phase-contrast plate 1229 of ½ λ or ¼ λ and anantireflection film 1226 are provided on the surface of polarizer 1225which is fixed on the surface of the second substrate 1204. Further, thephase-contrast plate of ¼ λ and the phase-contrast plate of ½ λ and thepolarizer 1225 may be sequentially provided in this order from thesecond substrate 1204. By providing the phase-contrast plate and thepolarizer, it can be prevented that external light reflects on the pixelelectrode. The first pixel electrode 1213 and the second pixel electrode1216 are formed of a conductive film which transmits light or does nottransmit light and the interlayer insulating film 1220 is formed of amaterial which absorbs visible light or an organic material dissolved ordispersed with a material which absorbs visible light, thereby externallight is not reflected on each pixel electrode, therefore, thephase-contrast plate or the polarizer do not have to be used.

The connecting wiring 1208 and the FPC 1209 are electrically connectedto each other by an anisotropic conductive film or anisotropicconductive resin 1227. Further, it is preferable to seal a connectingportion between each wiring layer and a connecting terminal with sealingresin. According to this structure, it can be prevented that moisturefrom a sectional portion enters to the light emitting element, causingdeterioration.

Note that a space filled with inert gas, for example, nitrogen gas maybe provided between the second substrate 1204 and the protectivelaminated layer 1218. Accordingly, moisture and oxygen can be furtherprevented.

A colored layer can be provided between the pixel portion 1202 and thepolarizer 1225. In this case, by providing a light emitting elementwhich can emit white light in a pixel portion and a colored layerexpressing RGB, a full color display can be performed. Further, byproviding a light emitting element which can emit blue color in thepixel portion and providing a color conversion layer and the likeseparately, a full color display can be performed. Also, light emittingelements which emit red, green and blue can be formed in each pixelportion and also a colored layer can be used as well. Such a displaymodule has high color purity and can perform high resolution display.

A light emitting display module can be formed by using a substrateformed of a film, resin, or the like for one or both of the firstsubstrate 1200 or the second substrate 1204. By sealing without using acounter substrate in this manner, improved lightweight, compact, andthin display device can be formed.

Note that any one of Embodiment Modes 1 to 9 can be applied to thisembodiment. In this embodiment, a light emitting display module isdescribed as a display module, however, the invention is not limited tothis and can be applied to display modules such as a light emittingdisplay device, a DMD (Digital Micromirror Device), a PDP (PlasmaDisplay Panel), an FED (Field Emission Display), and an electrophoresisdisplay device (electronic paper).

Embodiment 8

By incorporating the display module described in Embodiment 6 or 7 intoa housing, various electronic apparatuses can be manufactured. Theelectronic apparatuses include a television apparatus, a video camera, adigital camera, a goggle type display (a head mounted display), anavigation system, an audio reproducing apparatus (a car audio system,an audio component set and the like), a notebook personal computer, agame machine, a portable information terminal (a mobile computer, aportable phone, a portable game machine, an electronic book or thelike), an image reproducing apparatus provided with a memory medium(specifically an apparatus provided with a display which reproduces amemory medium such as a Digital Versatile Disc (DVD) and can display thereproduced image), and the like. Here, as examples of these electronicapparatuses, FIGS. 17 and 18 show a television apparatus and blockdiagrams thereof and FIGS. 19A and 19B each shows a digital camera.

FIG. 17 shows a typical structure of a television apparatus whichreceives an analog television broadcast. In FIG. 17, an electric wavefor television broadcast received by an antenna 1101 is inputted to atuner 1102. The tuner 1102 generates and outputs an intermediatefrequency (IF) signal by mixing a high frequency television signalinputted from the antenna 1101 with a signal of local oscillationfrequency controlled according to a desired receiver frequency.

The IF signal taken out from the tuner 1102 is amplified to a requiredvoltage by an intermediate frequency amplifier (an IF amplifier) 1103,and then a video detection is performed by a video detection circuit1104 as well as a sound detection is performed by a sound detectioncircuit 1105. The video signal outputted from the video detectioncircuit 1104 is separated into a luminance signal and a color signal bya video signal processing circuit 1106 and become a video signal througha predetermined video signal processing, and then outputted to a videosystem output portion 1108 of a liquid crystal display device, a lightemitting display device, a DMD (Digital Micromirror Device), a PDP(Plasma Display Panel), an FED (Field Emission Display), anelectrophoresis display device (electronic paper) and the like as one ofthe invention.

Further, a signal outputted from the sound detection circuit 1105becomes a sound signal through a processing such as an FM demodulationby the sound system processing circuit 1107, then appropriatelyamplified, and outputted to a sound system output portion 1109 such as aspeaker.

A television apparatus using the invention is not limited to anapplication to an analog broadcast such as a ground-based broadcast suchas VHF band and UHF band, a cable broadcast, or a BS broadcast, but canbe applied to a digital terrestrial television broadcast, a cabledigital broadcast, or a BS digital broadcast.

FIG. 18 shows a perspective view of the television apparatus seen from afront side, including a housing 1151, a display portion 1152, a speakerportion 1153, an operating portion 1154, a video input terminal 1155 andthe like. FIG. 17 shows a structure thereof.

The display portion 1152 is an example of the video system outputportion 1108 of FIG. 17, which displays an image.

The speaker portion 1153 is an example of the sound system outputportion of FIG. 17, which outputs sound.

The operating portion 1154 is provided with a power source switch, avolume switch, a switch selector, a tuner switch, a selection switch andthe like. By pressing the switches, ON/OFF of the power source,selection of images, control of sound, selection of a tuner and the likeare operated. Although not shown, the aforementioned selection can alsobe performed by a remote controller type operating portion.

The video input terminal 1155 is a terminal for inputting a video signalfrom outside a VTR, a DVD, a game machine and the like into thetelevision apparatus.

In the case where the television apparatus described in this embodimentis a wall-mounted television apparatus, a portion for hanging on wall isprovide on the back of the main body.

By using a display device as an example of a semiconductor device of theinvention for a display portion of the television apparatus, a low costtelevision apparatus can be manufactured with high throughput and yield.Further, by using a semiconductor device of the invention for a CPUwhich controls the video detection circuit, the video processingcircuit, the sound detection circuit, and the sound processing circuitof the television apparatus, a low cost television apparatus can bemanufactured with high throughput and yield. Accordingly, the inventioncan be applied particularly to a large display medium such as awall-mounted television apparatus, an information display board at trainstations, airports and the like, an advertisement display board on thestreets and the like.

FIGS. 19A and 19B show examples of a digital camera. FIG. 19A is aperspective view of the digital camera seen from the front while FIG.19B is a perspective view thereof seen from the back. In FIG. 19A, thedigital camera includes a release button 1301, a main switch 1302, afinder 1303, a flash 1304, a lens 1305, a camera cone 1306, and ahousing 1307.

In FIG. 19B, a finder eyepiece window 1311, a monitor 1312, and anoperating button 1313 are provided.

By pressing the release button 1301 to a half position, a focusadjusting assembly and an exposure adjusting assembly are operated, anda shutter opens when the release button 1301 is pressed to the bottomposition.

By pressing or rotating the main switch 1302, ON/OFF of the power sourceof the digital camera is switched.

The finder 1303 is disposed above the lens 1305 on the front of thedigital camera, which is used for checking a shooting range and aposition of focus from the finder eyepiece window 1311 shown in FIG.19B.

The flash 1304 is disposed at an upper front portion of the digitalcamera, which irradiates fill light when the object luminance is low asthe shutter opens with the release button pressed.

The lens 1305 is disposed on the front of the digital camera. The lensis formed of a focusing lens, a zoom lens and the like and constitutesan imaging optical system with the shutter and an aperture which are notshown. Moreover, an image sensor such as a CCD (Charge Coupled Device)is provided in the back of the lens.

The camera corn 1306 moves the lens for adjusting the focus of thefocusing lens, the zoon lens and the like. When shooting an image, thelens 1305 is moved forward by sending out the camera cone. When carried,the lens 1305 is stowed for compactness. In this embodiment, an objectcan be shot by zooming by sending out the camera cone, however, theinvention is not limited to this structure and may be a digital camerawhich is capable of shooting an image by zooming without sending out thecamera cone according to a structure of an imaging optical system in thehousing 1307.

The finder eyepiece window 1311 is provided on upper back portion of thedigital camera, which is used for checking a shooting range and aposition of focus.

The operating button 1313 is a button having various functions providedon the back of the digital camera, which includes a set-up button, amenu button, a display button, a function button, a selection button,and the like.

By using a display device as one mode of a semiconductor device of theinvention for a monitor, a low cost digital camera can be manufacturedwith high throughput and yield. In addition, by using a CPU as one modeof a semiconductor device of the invention for a CPU which performsprocessing by receiving an input of the button having various functions,the main switch, the release button and the like, a CPU which controlseach of a circuit which performs an auto focusing operation and an autofocus adjusting operation, a timing circuit which controls driving ofstroboscopic light and CCD (Charge Coupled Device), an image pick-upcircuit which generates a video signal from a signal photoelectricallyconverted by an image sensor such as a CCD, an A/D converter circuitwhich converts a video signal generated in the image pick-up circuitinto a digital signal, a memory interface which writes and reads outvideo data of memory, a low cost digital camera can be manufactured withhigh throughput and high yield.

This application is based on Japanese Patent Applications serial no.2004-009232 and 2004-134898 filed in Japan Patent Office on Jan. 16th,2004 and Apr. 28th, 2004 respectively, the contents of which are herebyincorporated by reference.

1. A method for forming a substrate having a film pattern comprising thesteps of: forming a mask pattern using a material which forms a liquidrepellent surface in a first region on a lyophilic surface; and forminga film pattern having a desired shape by using a lyophilic solution in asecond region including the outer edge of the first region on thelyophilic surface.
 2. The method according to claim 1, wherein the maskpattern is removed after forming the film pattern.
 3. The methodaccording to claim 1, wherein the film pattern comprises a materialselected from the group consisting of a conductive material, aninsulating material, and a semiconductor material.
 4. The methodaccording to claim 1, wherein the film pattern is selected from thegroup consisting of a wiring, an electrode, and an antenna.
 5. Themethod according to claim 1, wherein the film pattern is selected fromthe group consisting of a channel forming region, a source region, and adrain region.
 6. The method according to claim 1, wherein the filmpattern is selected from the group consisting of a gate insulating film,an interlayer insulating film, and a protective film.
 7. The methodaccording to claim 1, wherein the first region has a closed curve shapewhile the second region is formed inside the closed curve shape.
 8. Amethod for forming a substrate having a film pattern comprising thesteps of: forming a mask pattern by using a material for forming aliquid repellent surface on a lyophilic surface; and forming a filmpattern having a desired shape by using a lyophilic solution in a regionwhere the mask pattern is not formed.
 9. The method according to claim8, wherein the mask pattern is removed after forming the film pattern.10. The method according to claim 8, wherein the film pattern comprisesa material selected from the group consisting of a conductive material,an insulating material, and a semiconductor material.
 11. The methodaccording to claim 8, wherein the film pattern is selected from thegroup consisting of a wiring, an electrode, and an antenna.
 12. Themethod according to claim 8, wherein the film pattern is selected fromthe group consisting of a channel forming region, a source region, and adrain region.
 13. The method according to claim 8, wherein the filmpattern is selected from the group consisting of a gate insulating film,an interlayer insulating film, and a protective film.
 14. The methodaccording to claim 8, wherein the first region has a closed curve shapewhile the second region is formed inside the closed curve shape.
 15. Amethod for forming a substrate having a film pattern, comprising:forming a first mask pattern by using a solution which forms a liquidrepellent surface on a film having a lyophilic surface; forming a secondmask pattern on an outer edge of the first mask pattern by using alyophilic solution; and forming a film pattern by removing a portion ofthe lyophilic film after removing the first mask pattern.
 16. The methodaccording to claim 15, wherein the second mask pattern is removed afterforming the film pattern.
 17. The method according to claim 15, whereinthe film pattern comprises a material selected from the group consistingof a conductive material, an insulating material, and a semiconductormaterial.
 18. The method according to claim 15, wherein the film patternis selected from the group consisting of a wiring, an electrode, and anantenna.
 19. The method according to claim 15, wherein the film patternis selected from the group consisting of a channel forming region, asource region or a drain region.
 20. The method according to claim 15,wherein the film pattern is selected from the group consisting of a gateinsulating film, an interlayer insulating film, and a protective film.21. A method for forming a substrate having a film pattern comprisingthe steps of: forming a first mask pattern by using a solution whichforms a liquid repellent surface on an insulating film which haslyophilic property; forming a second mask pattern on an outer edge ofthe first mask pattern by using a lyophilic solution; removing the firstmask pattern; and forming a contact hole in the insulating film byremoving a portion of the insulting film.
 22. A substrate having a filmpattern comprising: a film pattern formed on a member which has ahydrophilic surface; and a region which has a liquid repellent surfaceon an outer edge of the film pattern.
 23. The substrate according toclaim 22, wherein the region is formed on the member which has alyophilic surface.
 24. The substrate according to claim 22, wherein theregion is formed on a surface or inside the member which has a lyophilicsurface.
 25. A substrate having a film pattern comprising: a filmpattern formed on a member which has a hydrophilic surface; and a regionwhich has a liquid repellent surface in a region except for the filmpattern.
 26. The substrate according to claim 25, wherein the region isformed on the member which has a lyophilic surface.
 27. The substrateaccording to claim 25, wherein the region is formed on a surface orinside the member which has a lyophilic surface.
 28. A method formanufacturing a semiconductor device comprising the steps of: forming afirst mask pattern by using a solution which forms a liquid repellentsurface on a source electrode and a drain electrode; forming aninterlayer insulating film by using a lyophilic solution on an outeredge of the first mask pattern; and forming a conductive film whichconnects to the source electrode and the drain electrode by removing thefirst mask pattern.
 29. The method according to claim 28, wherein theconductive film is a pixel electrode.
 30. The method according to claim28, wherein the semiconductor device comprises a transistor selectedfrom the group consisting of a thin film transistor, a field effecttransistor, and an organic semiconductor transistor.
 31. The methodaccording to claim 30, wherein the thin film transistor has a structureselected from the group consisting of a top gate structure, a bottomgate structure, a coplanar structure and an inverted stagger structure.32. A method for manufacturing a semiconductor device comprising thesteps of: forming a first mask pattern by using a solution which forms aliquid repellent surface on a source electrode and a drain electrode;forming an interlayer insulating film by using a lyophilic solution onan outer edge of the first mask pattern; forming a second film patternby discharging a lyophilic solution on a portion of the interlayerinsulating film after removing the first mask pattern; and forming aconductive film which connects to the source electrode or the drainelectrode on the interlayer insulating film.
 33. The method according toclaim 32, wherein the conductive film is a pixel electrode.
 34. Themethod according to claim 32, wherein the semiconductor device comprisesa transistor selected from the group consisting of a thin filmtransistor, a field effect transistor, and an organic semiconductortransistor.
 35. The method according to claim 34, wherein the thin filmtransistor has a structure selected from the group consisting of a topgate structure, a bottom gate structure, a coplanar structure and aninverted stagger structure.
 36. A method for manufacturing asemiconductor device comprising the steps of: forming a gate electrodeand a connecting conductive film; depositing a first insulating film anda semiconductor film sequentially; forming a source region and a drainregion by etching a portion of the semiconductor film; forming a sourceelectrode and a drain electrode by forming a first conductive film incontact with the source region and the drain region; forming a firstmask pattern by using solution which forms a liquid repellent surface ona portion of the source electrode or the drain electrode; forming aninterlayer insulating film by using a lyophilic solution on an outeredge of the first mask pattern; exposing the connecting conductive filmby etching the first insulating film with the interlayer insulating filmas a mask; and forming a second conductive film which connects to theconnecting conductive film.
 37. The method according to claim 36,wherein the second conductive film is a pixel electrode.
 38. A liquidcrystal television comprising the semiconductor device manufacturedaccording to claim
 36. 39. An EL television comprising the semiconductordevice manufactured according to claim
 36. 40. A method formanufacturing a semiconductor device comprising the steps of: forming agate electrode and a connecting conductive film; depositing a firstinsulating film and a semiconductor film sequentially; forming a sourceregion and a drain region by etching a portion of the semiconductorfilm; forming a source electrode and a drain electrode by forming afirst conductive film in contact with the source region and the drainregion; depositing a second insulating film; forming a first maskpattern by using solution which forms a liquid repellent surface in aregion where the second insulating film and the connecting conductivelayer are overlapped; forming an interlayer insulating film by using alyophilic solution on an outer edge of the first mask pattern; exposingthe connecting conductive film by etching the first insulating film andthe second insulating film; and forming a second conductive film whichconnects to the connecting conductive film.
 41. The method according toclaim 40, wherein the second conductive film is a pixel electrode.
 42. Aliquid crystal television comprising the semiconductor devicemanufactured according to claim
 40. 43. An EL television comprising thesemiconductor device manufactured according to claim
 40. 44. A methodfor forming a substrate having a film pattern comprising the steps of:forming a mask pattern which has low wettability on a film or a member;and forming a film pattern having a desired shape which has highwettability on an outer edge of the mask pattern on the film or themember.
 45. A method according to claim 44, wherein a difference betweenthe contact angle of the mask pattern and that of the film pattern is30° or more.
 46. A method for forming a substrate having a film patterncomprising the steps of: forming a mask pattern which has lowwettability on a film or a member; and forming a film pattern having adesired shape which has high wettability in a region except for a regionwhere the mask pattern is formed.
 47. A method according to claim 46,wherein a difference between the contact angle of the mask pattern andthat of the film pattern is 30° or more.